參數(shù)資料
型號(hào): KFM1216Q2M-DED
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: FLASH MEMORY
中文描述: 閃存
文件頁(yè)數(shù): 42/88頁(yè)
文件大?。?/td> 1150K
代理商: KFM1216Q2M-DED
MuxOneNAND512(KFM1216Q2M)
FLASH MEMORY
42
8.2 Device Bus Operations
Note : L=V
IL
(Low), H=V
IH
(High), X=Don’t Care.
Operation
CE
OE
WE
ADQ0~15
RP
CLK
AVD
Standby
H
X
X
High-Z
H
X
X
Warm Reset
X
X
X
High-Z
L
X
X
Asynchronous Write
L
H
L
Add. In /
Data In
H
L
Asynchronous Read
L
L
H
Add. In /
Data Out
H
L
Load Initial Burst Address
L
H
H
Add. In
H
Burst Read
L
L
H
Burst Data
Out
H
Terminate Burst Read
Cycle
H
X
H
High-Z
H
X
X
Terminate Burst Read
Cycle via RP
X
X
X
High-Z
L
X
X
Terminate Current Burst
Read Cycle and Start
New Burst Read Cycle
L
H
H
Add In
H
Table 5. Identification data description
Address
Data Out
0000h
Manufacturer ID
00ECh (0001h for ES)
0001h
Device ID
0020h for KFM1216Q2M
0002h
Reserved
0003h
Version ID
Eh for the initial, 1h for CS
H
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