參數(shù)資料
型號(hào)： KFM1216Q2M-DED
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： FLASH MEMORY
中文描述： 閃存
文件頁數(shù)： 45/88頁
文件大?。?/td> 1150K
代理商： KFM1216Q2M-DED
MuxOneNAND512(KFM1216Q2M)
FLASH MEMORY
45
8.3.3 Hot Reset
Hot reset means that the host resets the device by reset command(Note 2), and then the device logic stops all current operation and
executes internal reset operation(Note 1) , and resets current NAND Flash core operation. Hot reset has no effect on contents of
BootRAM and DataRAM.
Figure 7. Hot Reset Timings
NOTE:
1. Internal reset operation means that the device initializes internal registers and makes output signals go to default status and bufferRAM data are kept
unchanged after Warm/Hot reset operations.
2. Reset command : Command based reset or Register based reset
3. BP(Boot Partition) : BootRAM area[0000h~01FFh, 8000h~800Fh]
AVD
BP(Note 3)
or F220h
INT
ADQi
WE
CE
RDY
Operation or Idle
MuxOneNAND reset
Idle
MuxOneNAND
Operation
High-Z
00F0h
or 00F3h
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