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參數(shù)資料
| 型號： | KFM1216Q2M-DED |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | FLASH MEMORY |
| 中文描述： | 閃存 |
| 文件頁數(shù)： | 59/88頁 |
| 文件大?。?/td> | 1150K |
| 代理商： | KFM1216Q2M-DED |
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MuxOneNAND512(KFM1216Q2M)
FLASH MEMORY
59
8.10 OTP Operation
The device supports one block sized OTP area, which can be read and programmed with the same sequence as normal operation.
But this OTP block could not be erased. This block is separated from NAND Flash Array, so it could be accessed by OTP Access
command instead of FBA. If user wants to exit from OTP access mode, Cold, Warm and Hot Reset operation should be done.
OTP area is one block size(128KB, 64pages) and is devided by two areas. The first area from page 0 to page 9, total 10pages, is
assigned for user and the second area from page 10 to page 63, total 54pages, are occupied for the device manufacturer. The man-
ufacturer area is programmed prior to shipping, so this area could not be used by user.
This block is fully guaranteed to be a valid block.
OTP Block Page Allocation Information
Area
Page
Use
User
0 ~ 9 (10 pages)
Designated as user area
Manufacturer
10 ~ 63 (54 pages)
Used by the device manufacturer
Figure 18. OTP area structure and assignment
Page:2KB+64B
Sector(main area):512B
Sector(spare area):16B
One Block:
64pages
128KB+4KB
Reserved Area :
54pages
page 10 to page 63
User Area :
10pages
page 0 to page 9
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