參數(shù)資料
型號(hào)： KFM1216Q2M-DED
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： FLASH MEMORY
中文描述： 閃存
文件頁(yè)數(shù)： 61/88頁(yè)
文件大?。?/td> 1150K
代理商： KFM1216Q2M-DED
MuxOneNAND512(KFM1216Q2M)
FLASH MEMORY
61
8.10.2 OTP Programming(OTP Access+Program NAND)
OTP area could be programmed with the same sequence as normal program operation after being accessed by the command. But in
case of OTP area program, OTP area is not a real OTP area but can be programmed more than once. And 2 command sequence is
used to avoid the accidental write. To avoid the accidental write, FBA should point the unlocked area address among NAND Flash
Array address map even though OTP area is separated from NAND Flash Array.
Write ’DFS*, FBA’ of Flash
2)
Add: F100h DQ=DFS*’, FBA
* DBS, DFS is for DDP
Start
Write ’OTP Access’ Command
Add: F220h DQ=0075h
Write ’FPA, FSA’ of Flash
Add: F107h DQ=FPA, FSA
Write ’BSA, BSC’ of DataRAM
Add: F200h DQ=BSA, BSC
OTP Programming completed
Write Program command
DQ=0080h or 001Ah
Wait for INT register
low to high transition
Add: F241h DQ[15]=INT
Add: F220h
Wait for INT register
low to high transition
Add: F241h DQ[15]=INT
Figure 20. OTP program operation flow-chart
OTP Exit
Note 1) Data input could be done anywhere between "Start" and "Write Program Command".
2) FBA(NAND Flash Block Address) could be any address.
3) FBA should point the unlocked area address among NAND Flash Array address map.
Write ’FBA’ of Flash
Add: F100h DQ=FBA
3)
Select DataRAM for DDP
Add: F101h DQ=DBS*
Data Input
Completed
Write Data into DataRAM
1)
Add: DP DQ=Data-in
NO
Do Cold/Warm/Hot
/NAND Flash Core reset
Write ’OTP Access’ Command
Add: F220h DQ=0065h
Write 0 to interrupt register
Add: F241h DQ=0000h
Write 0 to interrupt register
Add: F241h DQ=0000h
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