參數(shù)資料
型號(hào): KFM1216Q2M-DED
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: FLASH MEMORY
中文描述: 閃存
文件頁(yè)數(shù): 82/88頁(yè)
文件大?。?/td> 1150K
代理商: KFM1216Q2M-DED
MuxOneNAND512(KFM1216Q2M)
FLASH MEMORY
82
10.4 Reset
NOTE:
These parameters are tested based on INT bit of interrupt register. Because the time on INT pin is related to the pull-up and
pull-down resistor value. Please refer to page 74 and 75.
Parameter
Symbol
Min
Max
Unit
RP Pin High or Reset Command Latch(During
Load Routines) to INT High (Note)
t
RST
-
10
μ
s
RP Pin High or Reset Command Latch(During
Program Routines) to INT High (Note)
t
RST
-
20
μ
s
RP Pin High or Reset Command Latch(During
Erase Routines) to INT High (Note)
t
RST
-
500
μ
s
RP Pin High or Reset Command Latch(NOT Dur-
ing Internal Routines) to Read Mode (Note)
t
RST
-
10
μ
s
INT High to Read Mode (Note)
t
Ready
200
-
ns
RP Pulse Width
t
RP
200
-
ns
Figure 29. Reset Timing
SWITCHING WAVEFORMS
CE, OE
RP
t
RP
t
Ready
t
RST
INT bit
AVD
BP(Note 3)
or F220h
INT bit
ADQi
WE
00F0h
or 00F3h
CE
Warm Reset
Hot Reset
t
RST
OE
t
Ready
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