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參數(shù)資料
| 型號(hào)： | KFM1216Q2M |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | FLASH MEMORY |
| 中文描述： | 閃存 |
| 文件頁(yè)數(shù)： | 58/88頁(yè) |
| 文件大小： | 1150K |
| 代理商： | KFM1216Q2M |
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MuxOneNAND512(KFM1216Q2M)
FLASH MEMORY
58
8.9 Erase Operation
The device can be erased in block unit. To erase a block is to write 1
′
s into the desired memory block by executing the Internal Erase
Routine. In order to perform the Internal Erase Routine, command sequence is necessary. First, host sets the block address of the
memory location. Second, erase command initiates the internal erase routine. During the execution of the Routine, the host is not
required to provide further controls or timings. During the Internal erase routine, commands except reset command written to the
device will be ignored.
Note that a reset during a erase operation will cause data corruption at the corresponding location.
Start
Write ’DFS*, FBA’ of Flash
Add: F100h DQ=DFS*’, FBA
Write ’Erase’ Command
Add: F220h DQ=0094h
Wait for INT register
low to high transition
Add: F241h DQ=[15]=INT
Add: F240h DQ[10]=WRc
Erase completed
DQ[10]=0
YES
Erase Error
NO
Read Controller
Status Register
Figure 17. Erase operation flow-chart
* DFS is for DDP
: If erase operation results in an error, map out
the failing block and replace it with another block.
*
Write 0 to interrupt register
Add: F241h DQ=0000h
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