參數(shù)資料
型號： KFM1216Q2M
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： FLASH MEMORY
中文描述： 閃存
文件頁數(shù)： 76/88頁
文件大?。?/td> 1150K
代理商： KFM1216Q2M
MuxOneNAND512(KFM1216Q2M)
FLASH MEMORY
76
9. DC CHARACTERISTICS
NOTES:
1.
CE should be V
IH
for RDY. IOBE should be ’0’ for INT.
2. Icc active for Host access
3. I
CC
active while Internal operation is in progress.
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Input Leakage Current
I
LI
V
IN
=V
SS
to V
CC
, V
CC
=V
CCmax
- 1.0
-
+ 1.0
μ
A
Output Leakage Current
I
LO
V
OUT
=V
SS
to V
CC
,
V
CC
=V
CCmax
, CE or OE=V
IH
(Note 1)
- 1.0
-
+ 1.0
μ
A
Active Asynchronous Read
Current (Note 2)
I
CC1
CE=V
IL
, OE=V
IH
-
8
15
mA
Active Burst Read Current
(Note 2)
I
CC2
CE=V
IL
, OE=V
IH
54MHz
-
12
20
mA
1MHz
-
3
4
mA
Active Write Current (Note 2)
I
CC3
CE=V
IL
, OE=V
IH
-
8
15
mA
Active Load Current (Note 3)
I
CC4
CE=V
IL
, OE=V
IH
, WE=V
IH
, V
IN
=V
IH
or
V
IL
-
20
25
mA
Active Program Current
(Note 3)
I
CC5
CE=V
IL
, OE=V
IH
, WE=V
IH
, V
IN
=V
IH
or
V
IL
-
20
25
mA
Active Erase Current (Note 3)
I
CC6
CE=V
IL
, OE=V
IH
, WE=V
IH
, V
IN
=V
IH
or
V
IL
-
15
20
mA
Standby Current
I
SB
CE= RP=V
CC
±
0.2V
-
10
50
μ
A
Input Low Voltage
V
IL
-
-0.5
-
0.4
V
Input High Voltage
V
IH
-
V
CCq
-0.4
-
V
CCq
+0.4
V
Output Low Voltage
V
OL
I
OL
= 100
μ
A , V
CC
=V
CCmin
,
V
CCq
=V
CCqmin
-
-
0.2
V
Output High Voltage
V
OH
I
OH
= -100
μ
A , V
CC
=V
CCmin
,
V
CCq
=V
CCqmin
V
CCq
-0.1
-
-
V
9.1 ABSOLUTE MAXIMUM RATINGS
NOTES
:
1. Minimum DC voltage is -0.5V on Input/ Output pins. During transitions, this level should not fall to POR level(typ. 1.5V) .
Maximum DC voltage is Vcc+0.6V on input / output pins which, during transitions, may overshoot to Vcc+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Parameter
Symbol
Rating
Unit
Voltage on any pin relative to V
SS
Vcc
Vcc
-0.5 to + 2.45
V
All Pins
V
IN
-0.5 to + 2.45
Temperature Under Bias
Extended
T
bias
-30 to +125
°
C
Storage Temperature
T
stg
-65 to +150
°
C
Short Circuit Output Current
I
OS
5
mA
Operating Temperature
Extended
T
A
-30 to + 85
°
C
9.2
RECOMMENDED OPERATING CONDITIONS
( Voltage reference to GND )
NOTES
:
1. The system power should reach 1.7V after POR triggering level(typ. 1.5V) within 400us.
2. Vcc-Core should reach the operating voltage level prior to Vcc-IO or at the same time.
Parameter
Symbol
1.8V Device
Unit
Min
Typ.
Max
Supply Voltage
V
CC
-Core
1.7
1.8
1.95
V
V
CC
-IO
Supply Voltage
V
SS
0
0
0
V
相關(guān)PDF資料
PDF描述
KFM1216Q2M-DEB FLASH MEMORY
KFM1216Q2M-DED FLASH MEMORY
KFM210M SPECIFICATIONS FOR SAW FILTER(BAND PASS FILTERS FOR US PCS IF STAGE)
KFM220M SPECIFICATIONS FOR SAW FILTER(BAND PASS FILTERS FOR KOREAN PCS IF STAGE)
KFM85M SPECIFICATIONS FOR SAW FILTER(BAND PASS FILTERS FOR CDMA IF STAGE)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KFM1216Q2M-DEB 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
KFM1216Q2M-DED 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
KFM17113 制造商:Luxo 功能描述:KFM ILLUMINATED MAGNIFIER W/CLAMP 3-DIOPTER 45" BLAC
KFM1G16Q2B-DEB8000 制造商:Samsung Semiconductor 功能描述:1GB ONENAND X16 FBGA - Trays
KFM1G16Q2M 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:MuxOneNAND FLASH MEMORY
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*