參數(shù)資料
型號(hào): KFM1216Q2M
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: FLASH MEMORY
中文描述: 閃存
文件頁(yè)數(shù): 86/88頁(yè)
文件大?。?/td> 1150K
代理商: KFM1216Q2M
MuxOneNAND512(KFM1216Q2M)
FLASH MEMORY
86
NOTES:
1. AA = Address of address register
CA = Address of command register
ECD = Erase Command
EMA = Address of memory to be erased
SA = Address of status reigster
2. “In progress” and “complete” refer to status register
3. Status reads in this figure is asynchronous read, but status read in synchronous mode is also supported.
Figure 32. Block Erase Operations
11. SWITCHING WAVEFORMS
Erase Operation
Erase Command Sequence
WE
CE
CLK
t
AVDP
t
AAVDS
t
AAVDH
t
DS
t
DH
t
CH
t
WPL
t
WPH
t
WC
SA
SA
In
Progress
Completed
ECD
CA
AA
A/DQ0:
A/DQ15
OE
Read Status Data
V
IL
t
BERS
INT
bit
t
CS
AVD
t
CER
RDY
Hi-Z
t
CEZ
t
CER
t
OEZ
t
WEA
EMA
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