參數(shù)資料
型號: KM23C32000C
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 32M-Bit (2Mx16) CMOS Mask ROM(32M位(2Mx16) CMOS掩膜ROM)
中文描述: 32兆位(2Mx16)的CMOS掩模ROM(32兆位(2Mx16)的CMOS掩膜光盤)
文件頁數(shù): 1/4頁
文件大?。?/td> 60K
代理商: KM23C32000C
KM23C32000C
CMOS MASK ROM
Pin Name
Pin Function
A
0
- A
20
Address Inputs
Q
0
- Q
15
Data Outputs
CE
Chip Enable
OE
Output Enable
V
CC
Power (+5V)
V
SS
Ground
32M-Bit (2Mx16) CMOS MASK ROM
The KM23C32000C is a fully static mask programmable ROM
organized 2,097,152x16 bit. It is fabricated using silicon-gate
CMOS process technology.
This device operates with a 5V single power supply, and all
inputs and outputs are TTL compatible.
Because of its asynchronous operation, it requires no external
clock assuring extremely easy operation.
It is suitable for use in program memory of microprocessor and
data memory, character generator.
The KM23C32000C is packaged in a 42-DIP.
GENERAL DESCRIPTION
FEATURES
2,097,152x16 bit organization
Fast access time : 100ns(Max.)
Supply voltage : single +5V
Current consumption
Operating : 50mA(Max.)
Standby : 50
μ
A(Max.)
Fully static operation
All inputs and outputs TTL compatible
Three state outputs
Package
-. KM23C32000C : 42-DIP-600
A
20
X
AND
DECODER
BUFFERS
A
0
Y
AND
DECODER
BUFFERS
MEMORY CELL
MATRIX
(2,097,152x16)
SENSE AMP.
CONTROL
LOGIC
BUFFERS
CE
OE
.
.
.
.
.
.
.
.
Q
0
Q
15
. . .
PIN CONFIGURATION
A
18
A
17
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
CE
V
SS
OE
Q
0
Q
8
Q
1
Q
9
Q
4
Q
12
Q
5
Q
13
Q
6
V
SS
Q
14
Q
7
Q
15
DIP
KM23C32000C
FUNCTIONAL BLOCK DIAGRAM
1
2
3
4
42
41
5
6
40
39
7
8
38
37
9
10
36
35
11
12
34
33
13
14
32
31
15
16
30
29
17
18
27
28
19
20
25
24
21
23
22
Q
2
Q
10
Q
3
Q
11
A
19
A
8
A
9
A
10
A
11
A
12
A
13
A
14
A
15
A
16
A
20
V
CC
26
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