參數(shù)資料
型號(hào)： KM23C64205ASG
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 64M-Bit (4Mx16 /2Mx32) CMOS Mask ROM(64M位(4Mx16 /2Mx32) CMOS掩膜ROM)
中文描述： 6400位（4Mx16 / 2Mx32）的CMOS掩模ROM（6400位（4Mx16 / 2Mx32）的CMOS掩膜光盤）
文件頁(yè)數(shù)： 1/5頁(yè)
文件大?。?/td> 71K
代理商： KM23C64205ASG
KM23C64205ASG
CMOS MASK ROM
Preliminary
Pin Name
Pin Function
A
0
- A
1
Page Address Inputs
A
2
- A
20
Address Inputs
Q
0
- Q
30
Data Outputs
Q
31
/A
-1
Output 31(Double word mode)/
LSB Address(Word mode)
WORD
Double word/Word mode selection
CE
Chip Enable
OE
Output Enable
V
CC
Power (+5V)
V
SS
Ground
N.C
No Connection
64M-Bit (4Mx16 /2Mx32) CMOS MASK ROM
The KM23C64205ASG is a fully static mask programmable
ROM fabricated using silicon gate CMOS process technology,
and is organized either as 4,194,304 x 16 bit(word mode) or as
2,097,152 x 32 bit(double word mode) depending on WORD
voltage level.(See mode selection table)
This device includes page read mode function, page read mode
allows 4 double words (or 8 words) of data to read fast in the
same page, CE and A
2
~ A
20
should not be changed.
This device operates with a 5V single power supply, and all
inputs and outputs are TTL compatible.
Because of its asynchronous operation, it requires no external
clock assuring extremely easy operation.
It is suitable for use in program memory of microprocessor, and
data memory, character generator.
The KM23C64205ASG is packaged in a 70-SSOP.
GENERAL DESCRIPTION
FEATURES
Switchable organization
4,194,304 x 16(word mode)
2,097,152 x 32(double word mode)
Fast access time
Random Access : 100ns(Max.)
Page Access : 30ns(Max.)
4 double Words / 8 Words page access
Supply voltage : single +5V
Current consumption
Operating : 150mA(Max.)
Standby : 50
μ
A(Max.)
Fully static operation
All inputs and outputs TTL compatible
Three state outputs
Package
-. KM23C64205ASG : 70-SSOP-500
PIN CONFIGURATION
A
0
A
1
A
2
A
3
A
4
A
5
V
CC
Q
0
Q
16
Q
1
Q
17
V
SS
V
CC
Q
2
Q
18
Q
3
Q
19
Q
4
Q
20
Q
5
Q
21
V
SS
V
CC
Q
6
Q
22
Q
7
Q
23
V
SS
A
6
A
7
A
8
A
9
A
10
A
11
A
12
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
A
13
A
14
A
15
A
16
A
17
A
18
A
19
V
CC
Q
8
Q
24
Q
9
Q
25
V
CC
V
SS
Q
10
Q
26
Q
11
Q
27
Q
12
Q
28
Q
13
Q
29
V
CC
V
SS
Q
14
Q
30
Q
15
Q
31
/A
-1
V
SS
CE
OE
WORD
N.C
A
20
N.C
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
SSOP
KM23C64205ASG
FUNCTIONAL BLOCK DIAGRAM
A
20
X
A
0~
A
1
A
-1
AND
DECODER
BUFFERS
A
2
Y
AND
DECODER
BUFFERS
MEMORY CELL
MATRIX
(2,097,152x32/
4,194,304x16)
SENSE AMP.
CONTROL
LOGIC
DATA OUT
BUFFERS
CE
OE
WORD
.
.
.
.
.
.
.
.
Q
0
/Q
16
Q
15
/Q
31
. . .
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