參數(shù)資料
型號: KM23V16005DG
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 16M-Bit (2Mx8 /1Mx16) CMOS Mask ROM(16M位(2M×8/1M×16) CMOS掩膜ROM)
中文描述: 1,600位(2Mx8 / 1Mx16)的CMOS掩模ROM(1,600位(2米× 8/1M × 16)的CMOS掩膜光盤)
文件頁數(shù): 3/5頁
文件大?。?/td> 67K
代理商: KM23V16005DG
KM23V16005DG
CMOS MASK ROM
Preliminary
TEST CONDITIONS
Item
Value
Input Pulse Levels
0.45V to 2.4V
Input Rise and Fall Times
10ns
Input and Output timing Levels
1.5V
Output Loads
1 TTL Gate and C
L
=100pF
AC CHARACTERISTICS
(T
A
=0
°
C to +70
°
C, V
CC
=3.3V/3.0V
±
0.3V, unless otherwise noted.)
READ CYCLE
NOTE
: Page Address is determined as below.
Word mode (BHE=V
IH
) : A
0
, A
1,
A
2
Byte mode (BHE=V
IL
) : A
-1
, A
0
, A
1,
A
2
Item
Symbol
KM23V16005DG-10
KM23V16005DG-12
Unit
Min
Max
Min
Max
Read Cycle Time
t
RC
100
120
ns
Chip Enable Access Time
t
ACE
100
120
ns
Address Access Time
t
AA
100
120
ns
Page Address Access Time
t
PA
30
50
ns
Output Enable Access Time
t
OE
30
50
ns
Output or Chip Disable to
Output High-Z
t
DF
20
20
ns
Output Hold from Address Change
t
OH
0
0
ns
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