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參數(shù)資料
| 型號(hào)： | KM416C254DL |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256K x 16Bit CMOS Dynamic RAM with Extended Data Out(256K x 16位 CMOS 動(dòng)態(tài)RAM（帶擴(kuò)展數(shù)據(jù)輸出）) |
| 中文描述： | 256 × 16位分辨率的CMOS擴(kuò)展數(shù)據(jù)輸出動(dòng)態(tài)存儲(chǔ)器（256K × 16位的CMOS動(dòng)態(tài)隨機(jī)存儲(chǔ)器（帶擴(kuò)展數(shù)據(jù)輸出）） |
| 文件頁(yè)數(shù)： | 3/36頁(yè) |
| 文件大?。?/td> | 777K |
| 代理商： | KM416C254DL |
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KM416C254D/DL, KM416V254D/DL
CMOS DRAM
ABSOLUTE MAXIMUM RATINGS
* Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted
to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
Parameter
Symbol
Rating
Units
3.3V
5V
Voltage on any pin relative to V
SS
V
IN,
V
OUT
-0.5 to +4.6
-1.0 to +7.0
V
Voltage on V
CC
supply relative to V
SS
V
CC
-0.5 to +4.6
-1.0 to +7.0
V
Storage Temperature
Tstg
-55 to +150
-55 to +150
°
C
Power Dissipation
P
D
1
1
W
Short Circuit Output Current
I
OS
50
50
mA
RECOMMENDED OPERATING CONDITIONS
(Voltage referenced to Vss, T
A
= 0 to 70
°
C)
*1 : V
CC
+1.3V/15ns(3.3V), V
CC
+2.0V/20ns(5V), Pulse width is measured at V
CC
*2 : -1.3V/15ns(3.3V), -2.0V/20ns(5V), Pulse width is measured at V
SS
Parameter
Symbol
3.3V
5V
Units
Min
Typ
Max
Min
Typ
Max
Supply Voltage
V
CC
3.0
3.3
3.6
4.5
5.0
5.5
V
Ground
V
SS
0
0
0
0
0
0
V
Input High Voltage
V
IH
2.0
-
V
CC
+0.3
*1
0.8
2.4
-
V
CC
+1.0
*1
0.8
V
Input Low Voltage
V
IL
-0.3
*2
-
-1.0
*2
-
V
DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions unless otherwise noted.)
Max
Parameter
Symbol
Min
Max
Units
3.3V
Input Leakage Current (Any input 0
≤
V
IN
≤
V
IN
+0.3V,
all other input pins not under test=0 Volt)
I
I(L)
-5
5
uA
Output Leakage Current
(Data out is disabled, 0V
≤
V
OUT
≤
V
CC
)
I
O(L)
-5
5
uA
Output High Voltage Level(I
OH
=-2mA)
V
OH
2.4
-
V
Output Low Voltage Level(I
OL
=2mA)
V
OL
-
0.4
V
5V
Input Leakage Current (Any input 0
≤
V
IN
≤
V
IN
+0.5V,
all other input pins not under test=0 Volt)
I
I(L)
-5
5
uA
Output Leakage Current
(Data out is disabled, 0V
≤
V
OUT
≤
V
CC
)
I
O(L)
-5
5
uA
Output High Voltage Level(I
OH
=-5mA)
V
OH
2.4
-
V
Output Low Voltage Level(I
OL
=4.2mA)
V
OL
-
0.4
V
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| KM416V254DL | 256K x 16Bit CMOS Dynamic RAM with Extended Data Out(256K x 16位 CMOS 動(dòng)態(tài)RAM（帶擴(kuò)展數(shù)據(jù)輸出）) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM416C254DT4 | 制造商:n/a 功能描述:New |
| KM416C254DT4T | 制造商:SAMSUNG 功能描述:* |
| KM416C256ALJ-7 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:C-MOS 4M (256K X 16)-BIT DYNAMIC RAM WITH FAST PAGE MODE |
| KM416C256BLJ-7 | 制造商:SEC 功能描述:Dynamic RAM, Fast Page, 256K x 16, 40 Pin, Plastic, SOJ |
| KM416C256BLT6 | 制造商:Samsung Semiconductor 功能描述: |
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