參數(shù)資料
型號: KM416C4000B
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 4M x 16bit CMOS Dynamic RAM with Fast Page Mode(4M x 16位CMOS 動態(tài)RAM(帶快速頁模式))
中文描述: 4米× 16位的快速頁面模式的CMOS動態(tài)RAM(4米× 16位的CMOS動態(tài)隨機存儲器(帶快速頁模式))
文件頁數(shù): 4/35頁
文件大小: 751K
代理商: KM416C4000B
KM416C4000B,
KM416C4100B
CMOS DRAM
*Note :
I
CC1
, I
CC3
, I
CC4
and I
CC6
are dependent on output loading and cycle rates. Specified values are obtained with the output open.
I
CC
is specified as an average current. In I
CC1
, I
CC3
and I
CC6,
address can be changed maximum once while RAS=V
IL
. In I
CC4
,
address can be changed maximum once within one fast page mode cycle time,
t
PC
.
DC AND OPERATING CHARACTERISTICS
(Continued)
I
CC1
* : Operating Current (RAS and UCAS, LCAS, Address cycling @
t
RC
=min.)
I
CC2
: Standby Current (RAS=UCAS=LCAS=W=V
IH
)
I
CC3
* : RAS-only Refresh Current (UCAS=LCAS=V
IH
, RAS, Address cycling @
t
RC
=min.)
I
CC4
* : Fast Page Mode Current (RAS=V
IL
, UCAS or LCAS, Address cycling @
t
PC
=min.)
I
CC5
: Standby Current (RAS=UCAS=LCAS=W=V
CC
-0.2V)
I
CC6
* : CAS-Before-RAS Refresh Current (RAS and UCAS or LCAS cycling @
t
RC
=min)
Symbol
Power
Speed
Max
Units
KM416C4000B
KM416C4100B
I
CC1
Don
t care
-45
-5
-6
100
90
80
130
120
110
mA
mA
mA
I
CC2
Normal
Don
t care
2
2
mA
I
CC3
Don
t care
-45
-5
-6
100
90
80
130
120
110
mA
mA
mA
I
CC4
Don
t care
-45
-5
-6
70
60
50
80
70
60
mA
mA
mA
I
CC5
Normal
Don
t care
1
1
mA
I
CC6
Don
t care
-45
-5
-6
100
90
80
130
120
110
mA
mA
mA
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KM416C4000C 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Fast Page Mode
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KM416C4100BS-6 制造商:Samsung Semiconductor 功能描述: 制造商:Samsung Electro-Mechanics 功能描述:4M X 16 FAST PAGE DRAM, 60 ns, 50 Pin Plastic SMT
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