參數(shù)資料
型號(hào): KM416C4004B
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 4M x 16bit CMOS Dynamic RAM with Extended Data Out(4M x 16位 CMOS 動(dòng)態(tài)RAM(帶擴(kuò)展數(shù)據(jù)輸出))
中文描述: 4米× 16位的擴(kuò)展數(shù)據(jù)輸出的CMOS動(dòng)態(tài)RAM(4米× 16位的CMOS動(dòng)態(tài)隨機(jī)存儲(chǔ)器(帶擴(kuò)展數(shù)據(jù)輸出))
文件頁(yè)數(shù): 18/36頁(yè)
文件大?。?/td> 792K
代理商: KM416C4004B
KM416C4004B,
KM416C4104B
CMOS DRAM
RAS
V
IH
-
V
IL
-
UCAS
V
IH
-
V
IL
-
A
V
IH
-
V
IL
-
W
V
IH
-
V
IL
-
OE
V
IH
-
V
IL
-
COLUMN
ADDRESS
ROW
ADDRESS
t
RAS
t
RC
t
CRP
t
RP
t
CSH
t
RSH
t
CAS
t
RCD
t
RAL
t
RAD
t
ASR
t
RAH
t
ASC
t
CAH
t
CRP
Don
t care
UPPER BYTE WRITE CYCLE ( OE CONTROLLED WRITE )
NOTE : D
OUT
= OPEN
Undefined
LCAS
V
IH
-
V
IL
-
V
IH
-
V
IL
-
V
IH
-
V
IL
-
t
CRP
t
RWL
t
WP
t
CWL
t
DS
t
DH
DATA-IN
t
OEH
t
OED
DQ0 ~ DQ7
DQ8 ~ DQ15
t
CRP
相關(guān)PDF資料
PDF描述
KM416RD4C Direct Rambus DRAM(Direct Rambus 動(dòng)態(tài)RAM)
KM416S1021CT-G7 512K x 16Bit x 2 Banks Synchronous DRAM with SSTL interface
KM416S1021CT-G8 512K x 16Bit x 2 Banks Synchronous DRAM with SSTL interface
KM416S1021CT-GS 512K x 16Bit x 2 Banks Synchronous DRAM with SSTL interface
KM416S1120D 512K x 16bit x 2 Banks Synchronous DRAM LVTTL
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KM416C4004C 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Extended Data Out
KM416C4100B 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Fast Page Mode
KM416C4100BS-6 制造商:Samsung Semiconductor 功能描述: 制造商:Samsung Electro-Mechanics 功能描述:4M X 16 FAST PAGE DRAM, 60 ns, 50 Pin Plastic SMT
KM416C4100C 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Fast Page Mode
KM416C4104C 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Extended Data Out