- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374354 > KM416C4004B (SAMSUNG SEMICONDUCTOR CO. LTD.) 4M x 16bit CMOS Dynamic RAM with Extended Data Out(4M x 16位 CMOS 動(dòng)態(tài)RAM（帶擴(kuò)展數(shù)據(jù)輸出）) PDF資料下載
參數(shù)資料
| 型號(hào)： | KM416C4004B |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 4M x 16bit CMOS Dynamic RAM with Extended Data Out(4M x 16位 CMOS 動(dòng)態(tài)RAM（帶擴(kuò)展數(shù)據(jù)輸出）) |
| 中文描述： | 4米× 16位的擴(kuò)展數(shù)據(jù)輸出的CMOS動(dòng)態(tài)RAM（4米× 16位的CMOS動(dòng)態(tài)隨機(jī)存儲(chǔ)器（帶擴(kuò)展數(shù)據(jù)輸出）） |
| 文件頁(yè)數(shù)： | 3/36頁(yè) |
| 文件大?。?/td> | 792K |
| 代理商： | KM416C4004B |
第1頁(yè)第2頁(yè)當(dāng)前第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)
KM416C4004B,
KM416C4104B
CMOS DRAM
ABSOLUTE MAXIMUM RATINGS
* Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to
the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
Parameter
Symbol
Rating
Units
Voltage on any pin relative to V
SS
V
IN,
V
OUT
-1.0 to +7.0
V
Voltage on V
CC
supply relative to V
SS
V
CC
-1.0 to +7.0
V
Storage Temperature
Tstg
-55 to +150
°
C
Power Dissipation
P
D
1
W
Short Circuit Output Current
I
OS
Address
50
mA
RECOMMENDED OPERATING CONDITIONS
(Voltage referenced to Vss, T
A
= 0 to 70
°
C)
*1 : V
CC
+2.0V at pulse width
≤
20ns which is measured at V
CC
*2 : -2.0 at pulse width
≤
20ns which is measured at V
SS
Parameter
Symbol
Min
Typ
Max
Units
Supply Voltage
V
CC
4.5
5.0
5.5
V
Ground
V
SS
0
0
0
V
Input High Voltage
V
IH
2.4
-
V
CC
+1.0
*1
0.8
V
Input Low Voltage
V
IL
-1.0
*2
-
V
DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions unless otherwise noted.)
Parameter
Symbol
Min
Max
Units
Input Leakage Current (Any input 0
≤
V
IN
≤
V
CC
+0.5V,
all other pins not under test=0 Volt)
I
I(L)
-5
5
uA
Output Leakage Current
(Data out is disabled, 0V
≤
V
OUT
≤
V
CC
)
I
O(L)
-5
5
uA
Output High Voltage Level(I
OH
=-5mA)
V
OH
2.4
-
V
Output Low Voltage Level(I
OL
=4.2mA)
V
OL
-
0.4
V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM416RD4C | Direct Rambus DRAM(Direct Rambus 動(dòng)態(tài)RAM) |
| KM416S1021CT-G7 | 512K x 16Bit x 2 Banks Synchronous DRAM with SSTL interface |
| KM416S1021CT-G8 | 512K x 16Bit x 2 Banks Synchronous DRAM with SSTL interface |
| KM416S1021CT-GS | 512K x 16Bit x 2 Banks Synchronous DRAM with SSTL interface |
| KM416S1120D | 512K x 16bit x 2 Banks Synchronous DRAM LVTTL |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM416C4004C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| KM416C4100B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
| KM416C4100BS-6 | 制造商:Samsung Semiconductor 功能描述: 制造商:Samsung Electro-Mechanics 功能描述:4M X 16 FAST PAGE DRAM, 60 ns, 50 Pin Plastic SMT |
| KM416C4100C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
| KM416C4104C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Extended Data Out |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。