參數(shù)資料
型號: KM416C4104B
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 4M x 16bit CMOS Dynamic RAM with Extended Data Out(4M x 16位 CMOS 動態(tài)RAM(帶擴展數(shù)據(jù)輸出))
中文描述: 4米× 16位的擴展數(shù)據(jù)輸出的CMOS動態(tài)RAM(4米× 16位的CMOS動態(tài)隨機存儲器(帶擴展數(shù)據(jù)輸出))
文件頁數(shù): 7/36頁
文件大?。?/td> 792K
代理商: KM416C4104B
KM416C4004B,
KM416C4104B
CMOS DRAM
TEST MODE CYCLE
Parameter
Symbol
-45
-5
-6
Units
Note
Min
Max
Min
Max
Min
Max
Random read or write cycle time
t
RC
79
89
109
ns
Read-modify-write cycle time
t
RWC
110
121
145
ns
Access time from RAS
t
RAC
50
55
65
ns
3,4,10,12
Access time from CAS
t
CAC
17
18
20
ns
3,4,5,12
Access time from column address
t
AA
28
30
35
ns
3,10,12
RAS pulse width
t
RAS
50
10K
55
10K
65
10K
ns
CAS pulse width
t
CAS
12
10K
13
10K
15
10K
ns
RAS hold time
t
RSH
18
18
20
ns
CAS hold time
t
CSH
39
43
50
ns
Column Address to RAS lead time
t
RAL
28
30
35
ns
CAS to W delay time
t
CWD
29
35
39
ns
7
RAS to W delay time
t
RWD
62
72
84
ns
7
Column Address to W delay time
t
AWD
40
47
54
ns
7
Hyper Page cycle time
t
HPC
22
25
30
ns
20
Hyper Page read-modify-write cycle time
t
HPRWC
52
53
61
ns
20
RAS pulse width (Hyper page cycle)
t
RASP
50
200K
55
200
65
200
ns
Access time from CAS precharge
t
CPA
29
33
40
ns
3
OE access time
t
OEA
17
18
20
ns
OE to data delay
t
OED
13
18
20
ns
OE command hold time
t
OEH
13
18
20
ns
( Note 11 )
相關PDF資料
PDF描述
KM416C4004B 4M x 16bit CMOS Dynamic RAM with Extended Data Out(4M x 16位 CMOS 動態(tài)RAM(帶擴展數(shù)據(jù)輸出))
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KM416S1021CT-G8 512K x 16Bit x 2 Banks Synchronous DRAM with SSTL interface
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