參數(shù)資料
型號(hào)： KM416RD4AC
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
中文描述： 128/144Mbit RDRAM的256 × 16/18位× 2 * 16屬銀行直接RDRAMTM
文件頁(yè)數(shù)： 52/64頁(yè)
文件大?。?/td> 4052K
代理商： KM416RD4AC
Page 49
KM416RD8AC(D)/KM418RD8AC(D)
Direct RDRAM
Rev. 1.01 Oct. 1999
RSL - Transmit Timing
Figure 55 is a timing diagram which shows the detailed
requirements for the RSL output signals on the Channel.
The DQA and DQB signals are outputs to transmit informa-
tion that is received by a Direct RAC on the Channel. Each
signal is driven twice per t
CYCLE
interval. The beginning
and end of the even transmit window is at the 75% point of
the previous cycle and at the 25% point of the current cycle.
The beginning and end of the odd transmit window is at the
25% point and at the 75% point of the current cycle. These
transmit points are measured relative to the crossing points
of the falling CTM clock edge. The size of the actual
transmit window is less than the ideal t
CYCLE
/2, as indicated
by the non-zero values of t
Q,MIN
and t
Q,MAX
. The t
Q
param-
eters are measured at the 50% voltage point of the output
transition.
The t
QR
and t
QF
rise- and fall-time parameters are measured
at the 20% and 80% points of the output transition.
Figure 55: RSL Timing - Data Signals for Transmit
t
Q,MIN
t
Q,MAX
t
Q,MAX
t
Q,MIN
0.25t
CYCLE
V
QH
50%
V
QL
80%
20%
V
CIH
50%
V
CIL
80%
20%
CTM
CTMN
t
QF
t
QR
even
odd
0.75t
CYCLE
0.75t
CYCLE
DQA
DQB
V
CM
V
X+
V
X-
相關(guān)PDF資料
PDF描述
KM416RD4AD 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
KM416S1020C 512K x 16Bit x 2 Banks Synchronous DRAM(512K x 16位 x 2組同步動(dòng)態(tài)RAM)
KM416S1021C 512K x 16Bit x 2 Banks Synchronous DRAM with SSTL interfacer(512K x 16位 x 2組同步動(dòng)態(tài)RAM（帶SSTL接口）)
KM416S4020B 2M x 16Bit x 2 Banks Synchronous DRAM(2M x 16位 x2組同步動(dòng)態(tài)RAM)
KM416S4021B 2M x 16Bit x 2 Banks Synchronous DRAM(2M x 16位 x2組同步動(dòng)態(tài)RAM)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KM416RD4AD 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
KM416RD4C 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
KM416RD4D 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
KM416RD8AC 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
KM416RD8AC(D)-RK70 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
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