- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373155 > KM416S1020C (SAMSUNG SEMICONDUCTOR CO. LTD.) 512K x 16Bit x 2 Banks Synchronous DRAM(512K x 16位 x 2組同步動態(tài)RAM) PDF資料下載
參數(shù)資料
| 型號： | KM416S1020C |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 512K x 16Bit x 2 Banks Synchronous DRAM(512K x 16位 x 2組同步動態(tài)RAM) |
| 中文描述： | 為512k × 16 × 2銀行同步DRAM（為512k × 16位× 2組同步動態(tài)RAM）的 |
| 文件頁數(shù)： | 21/42頁 |
| 文件大?。?/td> | 582K |
| 代理商： | KM416S1020C |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁當(dāng)前第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁
CMOS SDRAM
DEVICE OPERATIONS - I
ELECTRONICS
REV. 4 Feb. '98
*Note :
1. Active power down : one or both banks active state.
2. Precharge power down : both banks precharge state.
3. The auto refresh is the same as CBR refresh of conventional DRAM.
No precharge commands are required after auto refresh command.
During t
RFC
from auto refresh command, any other command can not be accepted.
4. Before executing auto/self refresh command, both banks must be idle state.
5. MRS, Bank Active, Auto/Self Refresh, Power Down Mode Entry.
6. During self refresh mode, refresh interval and refresh operation are perfomed internally.
After self refresh entry, self refresh mode is kept while CKE is low.
During self refresh mode, all inputs expect CKE will be don't cared, and outputs will be in Hi-Z state.
For the time interval of t
RFC
from self refresh exit command, any other command can not be accepted. Before/After self refresh mode, burst
auto refresh cycle (4096 cycles) is recommended.
10. Clock Suspend Exit & Power Down Exit
CLK
CKE
CMD
RD
1) Clock Suspend (=Active Power Down) Exit
tSS
CLK
CKE
CMD
2) Power Down (=Precharge Power Down)
Note 1
Note 5
Internal
CLK
NOP
tSS
Note 2
Internal
CLK
11. Auto Refresh & Self Refresh
CLK
CMD
1) Auto Refresh & Self Refresh
CKE
PRE
AR
CMD
Note 4
tRP
tRFC
ó
ó
ó
ó
CLK
CMD
2) Self Refresh
CKE
PRE
SR
CMD
Note 4
tRP
tRFC
ó
ó
Note 6
Note 3
ó
ACT
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM416S1021C | 512K x 16Bit x 2 Banks Synchronous DRAM with SSTL interfacer(512K x 16位 x 2組同步動態(tài)RAM（帶SSTL接口）) |
| KM416S4020B | 2M x 16Bit x 2 Banks Synchronous DRAM(2M x 16位 x2組同步動態(tài)RAM) |
| KM416S4021B | 2M x 16Bit x 2 Banks Synchronous DRAM(2M x 16位 x2組同步動態(tài)RAM) |
| KM416S4030B | 1M x 16Bitx 4 Banks Synchronous DRAM(1M x 16位 x4組同步動態(tài)RAM) |
| KM416S4031B | 1M x 16Bit x 4 Banks Synchronous DRAM with SSTL interface(1M x 16位 x4組同步動態(tài)RAM（帶SSTL接口）) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM416S1020CTG10 | 制造商:n/a 功能描述:KM416S1020CT-G10 制造商:Samsung Semiconductor 功能描述: |
| KM416S1020CT-G10 | 制造商:n/a 功能描述:KM416S1020CT-G10 制造商:Samsung Semiconductor 功能描述: |
| KM416S1020CT-G10M | 制造商:MAJOR 功能描述: |
| KM416S1021C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512K x 16Bit x 2 Banks Synchronous DRAM with SSTL interface |
| KM416S1021CT-G7 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512K x 16Bit x 2 Banks Synchronous DRAM with SSTL interface |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。