參數(shù)資料
型號(hào)： KM416S1120D
廠商： Electronic Theatre Controls, Inc.
英文描述： 512K x 16bit x 2 Banks Synchronous DRAM LVTTL
中文描述： 為512k × 16位× 2銀行同步DRAM LVTTL
文件頁(yè)數(shù)： 2/43頁(yè)
文件大小： 1131K
代理商： KM416S1120D
KM416S1120D
CMOS SDRAM
- 2 -
Rev. 1.4 (Jun. 1999)
Revision History
Revision 1.4 (June, 10th 1999)
AC values of tRCD/tRP/tRAS/tRC are returned to the number of clock cycles. Those can be also converted to ns-unit
based values by multiplying the number of clock cycles and clock cycle time of each part together. Accordingly,
- Changed tRCD and tRP of KM416S1120D-7/8 each from 18ns to 21ns/20ns
- Changed tRC of KM416S1120D-7/8 each from 67ns/68ns to 70ns
- Changed tRC of KM416S1120D-6 from 66ns(11CLK) to 60ns (10CLK)
Add KM416S1120D-C(183MHz@CL3) part .For -C part, tRDL=2CLK can be supported which is distingusihed by bucket
code "J"
Revision 1.3 (April 1999)
Modified power-up sequence.
Changed I
LI
from +/- 1uA to +/-10uA.
Changed tSAC and tSHZ of KM416S1120DT-G/F8@CL2 and KM416S1120DT-G/F10@CL3 from 7ns to 6ns.
Revision 1.2 (March 1999)
Removed KM416S1120D-Z (125MHz @ CL2) part.
Supported tRDL=2CLK for -6 part which is distinguished by bucket code "J" .
Revision 1.1 (February 1999)
Changed VDD Condition of KM416S1120D-7/8@CL2 from 3.135V~3.6V to 3.0V~3.6V.
Changed AC characteristics table format.
Revision 1.0 (February 1999) -
Final
Changed tRDL of KM416S1120D-6 @ CL3 from 2CLK to 1CLK
Changed tRAS and tRC of KM416S1120D-7 @ CL2 from 6CLK and 8CLK to 5CLK and 7CLK each.
Changed tSAC and tSHZ of KM416S1120D-7 @ CL3 from 6ns to 5.5ns
Changed tOH of KM416S1120D-8/10 from 3ns to 2.5ns
Add KM416S1120D-Z (125MHz @ CL2)
Changed ICC1 of KM416S1120D-7 @ CL2 from 120mA to 110mA
Revision 0.0 (November 1998) -
Preliminary
Initial draft
相關(guān)PDF資料
PDF描述
KM416S16230A 4M x 16Bit x 4 Banks Synchronous DRAM(4M x 16位 x4組同步動(dòng)態(tài)RAM)
KM416S4030C 1M x 16Bit x 4 Banks Synchronous DRAM
KM416S4030CT-F10 1M x 16Bit x 4 Banks Synchronous DRAM
KM416S4030CT-F7 1M x 16Bit x 4 Banks Synchronous DRAM
KM416S4030CT-F8 1M x 16Bit x 4 Banks Synchronous DRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KM416S1120DT-G/F10 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:512K x 16bit x 2 Banks Synchronous DRAM LVTTL
KM416S1120DT-G/F6 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:512K x 16bit x 2 Banks Synchronous DRAM LVTTL
KM416S1120DT-G/F7 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:512K x 16bit x 2 Banks Synchronous DRAM LVTTL
KM416S1120DT-G/F8 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:512K x 16bit x 2 Banks Synchronous DRAM LVTTL
KM416S1120DT-G/FC 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:512K x 16bit x 2 Banks Synchronous DRAM LVTTL
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*