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參數(shù)資料
| 型號： | KM416S16230A |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 4M x 16Bit x 4 Banks Synchronous DRAM(4M x 16位 x4組同步動態(tài)RAM) |
| 中文描述： | 4米× 16 × 4銀行同步DRAM（4米× 16位x4組同步動態(tài)RAM）的 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 62K |
| 代理商： | KM416S16230A |
KM416S16230A
CMOS SDRAM
REV. 0 May '98
Preliminary
The KM44S64230A is 268,435,456 bits synchronous high data
rate Dynamic RAM organized as 4 x 4,196,304 words by 16
bits, fabricated with SAMSUNG's high performance CMOS
technology. Synchronous design allows precise cycle control
with the use of system clock I/O transactions are possible on
every clock cycle. Range of operating frequencies, programma-
ble burst length and programmable latencies allow the same
device to be useful for a variety of high bandwidth, high perfor-
mance memory system applications.
JEDEC standard 3.3V power supply
LVTTL compatible with multiplexed address
Four banks operation
MRS cycle with address key programs
-. CAS latency (2 & 3)
-. Burst length (1, 2, 4, 8 & Full page)
-. Burst type (Sequential & Interleave)
All inputs are sampled at the positive going edge of the system
clock.
Burst read single-bit write operation
DQM for masking
Auto & self refresh
64ms refresh period (8K Cycle)
GENERAL DESCRIPTION
FEATURES
FUNCTIONAL BLOCK DIAGRAM
4M x 16Bit x 4 Banks Synchronous DRAM
ORDERING INFORMATION
Part No.
Max Freq.
125MHz
100MHz
100MHz
100MHz
Interface
Package
KM416S16230AT-G/F8
KM416S16230AT-G/FH
KM416S16230AT-G/FL
KM416S16230AT-G/F10
LVTTL
54pin
TSOP(II)
Samsung Electronics reserves the right to
change products or specification without
notice.
*
Bank Select
Data Input Register
4M x 16
4M x 16
S
O
I
Column Decoder
Latency & Burst Length
Programming Register
A
R
R
R
C
L
L
LCKE
LRAS
LCBR
LWE
LDQM
CLK
CKE
CS
RAS
CAS
WE
L(U)DQM
LWE
LDQM
DQi
CLK
ADD
LCAS
LWCBR
4M x 16
4M x 16
Timing Register
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM416S4030C | 1M x 16Bit x 4 Banks Synchronous DRAM |
| KM416S4030CT-F10 | 1M x 16Bit x 4 Banks Synchronous DRAM |
| KM416S4030CT-F7 | 1M x 16Bit x 4 Banks Synchronous DRAM |
| KM416S4030CT-F8 | 1M x 16Bit x 4 Banks Synchronous DRAM |
| KM416S4030CT-FH | 1M x 16Bit x 4 Banks Synchronous DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM416S1DTG8T | 制造商:Panasonic Industrial Company 功能描述:IC |
| KM416S4020AT-G10 | 制造商:Samsung Semiconductor 功能描述: |
| KM416S4020BT-GL | 制造商:Samsung Semiconductor 功能描述: |
| KM416S4030C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit x 4 Banks Synchronous DRAM |
| KM416S4030CT-F10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit x 4 Banks Synchronous DRAM |
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