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參數(shù)資料
| 型號(hào)： | KM416S4030CT-FH |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1M x 16Bit x 4 Banks Synchronous DRAM |
| 中文描述： | 100萬(wàn)× 16 × 4銀行同步DRAM |
| 文件頁(yè)數(shù)： | 5/11頁(yè) |
| 文件大?。?/td> | 124K |
| 代理商： | KM416S4030CT-FH |
KM416S4030C
REV. 2 June '98
CMOS SDRAM
Preliminary
1. Measured with outputs open.
2. Refresh period is 64ms.
3. KM416S4030CT-G**
4. KM416S4030CT-F**
Notes :
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, T
A
= 0 to 70
°
C)
Parameter
Symbol
Test Condition
CAS
Latency
Version
Unit
Note
-7
-8
-H
-L
-10
Operating current
(One bank active)
I
CC1
Burst length = 1
t
RC
≥
t
RC
(min)
I
OL
= 0 mA
75
75
70
70
65
mA
1
Precharge standby current in
power-down mode
I
CC2
P
CKE
≤
V
IL
(max), t
CC
= 15ns
1
mA
I
CC2
PS CKE & CLK
≤
V
IL
(max), t
CC
=
∞
1
Precharge standby current in
non power-down mode
I
CC2
N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 15ns
Input signals are changed one time during 30ns
12
mA
I
CC2
NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
6
Active standby current in
power-down mode
I
CC3
P
CKE
≤
V
IL
(max), t
CC
= 15ns
2
mA
I
CC3
PS CKE & CLK
≤
V
IL
(max), t
CC
=
∞
2
Active standby current in
non power-down mode
(One bank active)
I
CC3
N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 15ns
Input signals are changed one time during 30ns
20
mA
I
CC3
NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
10
mA
Operating current
(Burst mode)
I
CC4
I
OL
= 0 mA
Page burst
2Banks activated
t
CCD
= 2CLKs
3
130
115
90
90
90
mA
1
2
90
90
90
85
85
Refresh current
I
CC5
t
RC
≥
t
RC
(min)
125
110
mA
2
Self refresh current
I
CC6
CKE
≤
0.2V
1
mA
3
450
uA
4
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM416S4030CT-FL | 1M x 16Bit x 4 Banks Synchronous DRAM |
| KM416S4030CT-G | 1M x 16Bit x 4 Banks Synchronous DRAM |
| KM416V4004B | 4M x 16bit CMOS Dynamic RAM with Extended Data Out(4M x 16位 CMOS動(dòng)態(tài)RAM(帶擴(kuò)展數(shù)據(jù)輸出)) |
| KM416V4004C | 4M x 16bit CMOS Dynamic RAM with Extended Data Out(4M x 16位 CMOS動(dòng)態(tài)RAM(帶擴(kuò)展數(shù)據(jù)輸出)) |
| KM416V4100B | 4M x 16bit CMOS Dynamic RAM with Fast Page Mode(4M x 16位 CMOS動(dòng)態(tài)RAM(帶快速頁(yè)模式)) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM416S4030CT-FL | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:1M x 16Bit x 4 Banks Synchronous DRAM |
| KM416S4030CT-G | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:1M x 16Bit x 4 Banks Synchronous DRAM |
| KM416S8030 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:2M x 16Bit x 4 Banks Synchronous DRAM |
| KM416S8030B | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
| KM416S8030BN | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:128Mb SDRAM Shrink TSOP 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
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