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參數(shù)資料
| 型號： | KM41V4000D |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | RES,Film,0.33Ohms,250WV,200ppm-TC,4112-Case RoHS Compliant: Yes |
| 中文描述： | 4米× 1位的CMOS動態(tài)隨機存儲器的快速頁面模式 |
| 文件頁數(shù)： | 1/20頁 |
| 文件大?。?/td> | 340K |
| 代理商： | KM41V4000D |
KM41C4000D, KM41V4000D
CMOS DRAM
This is a family of 4,194,304 x 1bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells
within the same row. Power supply voltage (+5V or +3.3V), access time (-5, -6 or -7), power consumption(Normal or Low power), and
package type (SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and
Hidden refresh capabilities. Furthermore, self-refresh operation is available in Low power version.
This 4Mx1 Fast Page Mode DRAM family is fabricated using Samsung
′
s advanced CMOS process to realize high band-width, low power
consumption and high reliability. It may be used as main memory for main frames and mini computers, personal computer and high per-
formance microprocessor systems.
Part Identification
- KM41C4000D/D-L(5V, 1K Ref.)
- KM41V4000D/D-L(3.3V, 1K Ref.)
Fast Page Mode operation
CAS-before-RAS refresh capability
RAS-only and Hidden refresh capability
Self-refresh capability (3.3V, L-ver only)
Fast parallel test mode capability
TTL(5V)/LVTTL(3.3V) compatible inputs and outputs
Common I/O using early write
JEDEC Standard pinout
Available in 26(20)-pin SOJ 300mil and TSOP(II)
300mil packages
+5V
±
10% power supply(5V product)
+3.3V
±
0.3V power supply(3.3V product)
Control
Clocks
VBB Generator
Refresh Timer
Refresh Control
Refresh Counter
Row Address Buffer
Col. Address Buffer
Row Decoder
Column Decoder
RAS
CAS
W
Vcc
Vss
Memory Array
4,194,304 x1
Cells
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to
change products and specifications without notice.
4M x 1Bit CMOS Dynamic RAM with Fast Page Mode
DESCRIPTION
FEATURES
FUNCTIONAL BLOCK DIAGRAM
Refresh Cycles
Part
NO.
Refresh
cycle
Refresh Period
Normal
L-ver
KM41C4000D
KM41V4000D
1K
16ms
128ms
Performance Range
Speed
t
RAC
-5
50ns
-6
60ns
-7
70ns
t
CAC
15ns
15ns 110ns 40ns
20ns 130ns 45ns
t
RC
90ns
t
PC
35ns
Remark
5V only
5V/3.3V
5V/3.3V
Active Power Dissipation
Speed
-5
-6
-7
3.3V
-
220
200
5V
470
415
360
Unit : mW
S
Data out
Buffer
Data in
Buffer
Q
A0~A9
D
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| KM4211IC8 | Multiconductor Cable; Number of Conductors:9; Conductor Size AWG:18; No. Strands x Strand Size:19 x 30; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes; Conductor Material:Copper; Features:Unshielded RoHS Compliant: Yes |
| KM4211IC8TR3 | Multiconductor Cable; Number of Conductors:9; Conductor Size AWG:18; No. Strands x Strand Size:19 x 30; Jacket Material:Polyvinylchloride (PVC); Conductor Material:Copper; Features:Unshielded; Leaded Process Compatible:Yes RoHS Compliant: Yes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM4200 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual, Low Cost, +2.7V & +5V, 260MHz Rail-to-Rail Amplifier |
| KM4200IC8 | 功能描述:高速運算放大器 SOIC-8 RoHS:否 制造商:Texas Instruments 通道數(shù)量:1 電壓增益 dB:116 dB 輸入補償電壓:0.5 mV 轉(zhuǎn)換速度:55 V/us 工作電源電壓:36 V 電源電流:7.5 mA 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| KM4200IC8TR3 | 功能描述:運算放大器 - 運放 Dual RRO amplifier 26Mhz RoHS:否 制造商:STMicroelectronics 通道數(shù)量:4 共模抑制比（最小值）:63 dB 輸入補償電壓:1 mV 輸入偏流（最大值）:10 pA 工作電源電壓:2.7 V to 5.5 V 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 轉(zhuǎn)換速度:0.89 V/us 關(guān)閉:No 輸出電流:55 mA 最大工作溫度:+ 125 C 封裝:Reel |
| KM4200IC8TR3_NL | 功能描述:高速運算放大器 RoHS:否 制造商:Texas Instruments 通道數(shù)量:1 電壓增益 dB:116 dB 輸入補償電壓:0.5 mV 轉(zhuǎn)換速度:55 V/us 工作電源電壓:36 V 電源電流:7.5 mA 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| KM4200IC8TR3_Q | 功能描述:運算放大器 - 運放 Dual RRO amplifier 26Mhz RoHS:否 制造商:STMicroelectronics 通道數(shù)量:4 共模抑制比（最小值）:63 dB 輸入補償電壓:1 mV 輸入偏流（最大值）:10 pA 工作電源電壓:2.7 V to 5.5 V 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 轉(zhuǎn)換速度:0.89 V/us 關(guān)閉:No 輸出電流:55 mA 最大工作溫度:+ 125 C 封裝:Reel |
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