參數資料
型號: KM4216C258
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 256K x 16 Bit CMOS Video RAM(256K x 16 位 CMOS視頻RAM)
中文描述: 256K × 16位的CMOS視頻RAM(256K × 16位的CMOS視頻內存)
文件頁數: 4/41頁
文件大小: 772K
代理商: KM4216C258
KM4216C258
CMOS VIDEO RAM
Rev. 0.1 (Mar. 1998)
FUNCTION TRUTH TABLE
X : Don
t Care, - : Not Applicable, Tap : SAM Start (Column) Address, WMi : Write Mask Data (i=0 ~15)
RAS only refresh does not reset Stop or LMR functions.
Notes :
(1) CBRS, CBRN and CBRR all perform CAS-before-RAS refresh cycles. CBRR is used to reset all options and either
CBRS or CBRN is used to continue to refresh the RAM without clearing any of the options.
(2) After LMR cycle, RWM and BWM use old mask. (Use CBRR reset to new mask, use CBRS or CBRN to perform
CAS-before-RAS refresh while using Old mask)
(3) After CBRS cycle, SRT use Stop Register as a boundary address.
(4) Stop defines the column on which shift out moves to the other half of the SAM.
(5) After LMR, Mask Register is only changed by the another LMR or CBRR cycle.
(6) In the case of read cycle, DSF is don
t care
(7) The Row that is addressed will be refreshed, but a Row address is not required.
Mnemonic
Code
RAS
CAS
Address
DQi Input
Register
Function
CAS
DT/OE
WE
DSF
DSF
RAS
CAS
RAS
CAS/WE
Mask
Color
CBRS
(Note 1,3)
0
X
0
1
-
Stop
(Note4)
-
X
-
-
-
CBR Refresh/Stop
(No reset)
CBRN
(Note 1)
0
X
1
1
-
X
-
X
-
-
-
CBR Refresh
(No reset)
CBRR
(Note 1)
0
X
X
0
-
X
-
X
-
-
-
CBR Refresh
(Option reset)
ROR
1
1
X
0
-
Row
-
X
-
-
-
RAS - only Refresh
RT
1
0
1
0
X
Row
Tap
X
X
-
-
Read Transfer
SRT
1
0
1
1
X
Row
Tap
X
X
-
-
Split Read Transfer
RWM
1
1
0
0
0
Row
Col.
WMi
Data
Use
-
Masked Write
(New / Old Mask)
BWM
1
1
0
0
1
Row
Col.
WMi
Column
Mask
Use
Use
Masked Block Write
(New / Old Mask)
RW
1
1
1
0
0
(Note6)
Row
Col.
X
Data
-
-
Read or Write
BW
1
1
1
0
1
Row
Col.
X
Column
Mask
-
Use
Block Write
LMR
(Note 2)
1
1
1
1
0
Row
(Note7)
X
X
WMi
Load
(Note5)
-
Load(Old) Mask
Register set Cycle
LCR
1
1
1
1
1
Row
(Note7)
X
X
Color
-
Load
Load Color
Register set Cycle
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