- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374356 > KM44S16030C (SAMSUNG SEMICONDUCTOR CO. LTD.) 4M x 4Bit x 4 Banks Synchronous DRAM(4M x 4位 x 4組同步動態(tài)RAM) PDF資料下載
參數(shù)資料
| 型號： | KM44S16030C |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 4M x 4Bit x 4 Banks Synchronous DRAM(4M x 4位 x 4組同步動態(tài)RAM) |
| 中文描述： | 4米× 4位× 4銀行同步DRAM（4米× 4位× 4組同步動態(tài)RAM）的 |
| 文件頁數(shù)： | 5/11頁 |
| 文件大小： | 97K |
| 代理商： | KM44S16030C |
KM44S16030C
CMOS SDRAM
REV. 2 June '98
Preliminary
1. Measured with outputs open.
2. Refresh period is 64ms.
3. KM44S16030CT-G**
4. KM44S16030CT-F**
Notes :
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, T
A
= 0 to 70
°
C)
Parameter
Symbol
Test Condition
CAS
Latency
Version
Unit
Note
-7
-8
-H
-L
-10
Operating current
(One bank active)
I
CC1
Burst length = 1
t
RC
≥
t
RC
(min)
I
OL
= 0 mA
70
70
65
65
60
mA
1
Precharge standby current in
power-down mode
I
CC2
P
CKE
≤
V
IL
(max), t
CC
= 15ns
1
mA
I
CC2
PS CKE & CLK
≤
V
IL
(max), t
CC
=
∞
1
Precharge standby current in
non power-down mode
I
CC2
N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 15ns
Input signals are changed one time during 30ns
12
mA
I
CC2
NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
6
Active standby current in
power-down mode
I
CC3
P
CKE
≤
V
IL
(max), t
CC
= 15ns
2
mA
I
CC3
PS CKE & CLK
≤
V
IL
(max), t
CC
=
∞
2
Active standby current in
non power-down mode
(One bank active)
I
CC3
N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 15ns
Input signals are changed one time during 30ns
20
mA
I
CC3
NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
10
mA
Operating current
(Burst mode)
I
CC4
I
OL
= 0 mA
Page burst
2Banks activated
t
CCD
= 2CLKs
3
95
80
65
65
65
mA
1
2
65
65
65
60
60
Refresh current
I
CC5
t
RC
≥
t
RC
(min)
125
110
mA
2
Self refresh current
I
CC6
CKE
≤
0.2V
1
mA
3
450
uA
4
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM44S32030B | 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL |
| KM44S32030 | 8M x 4Bit x 4 Banks Synchronous DRAM(8M x 4位 x 4組同步動態(tài)RAM) |
| KM44V16104B | 16M x 4Bit CMOS Dynamic RAM with Extended Data Out(16M x 4位CMOS 動態(tài)RAM(帶擴(kuò)展數(shù)據(jù)輸出)) |
| KM44V16004B | 16M x 4Bit CMOS Dynamic RAM with Extended Data Out(16M x 4位CMOS 動態(tài)RAM(帶擴(kuò)展數(shù)據(jù)輸出)) |
| KM44V16104C | 16M x 4Bit CMOS Dynamic RAM with Extended Data Out(16M x 4位CMOS 動態(tài)RAM(帶擴(kuò)展數(shù)據(jù)輸出)) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM44S32030 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 4Bit x 4 Banks Synchronous DRAM |
| KM44S32030B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL |
| KM44S32030BT-G/F10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL |
| KM44S32030BT-G/F8 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL |
| KM44S32030BT-G/FA | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。