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參數(shù)資料
| 型號： | KM44S32030B |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL |
| 中文描述： | 128Mbit SDRAM的8米× 4位× 4銀行同步DRAM LVTTL |
| 文件頁數(shù)： | 3/11頁 |
| 文件大?。?/td> | 135K |
| 代理商： | KM44S32030B |
KM44S32030B
CMOS SDRAM
Rev. 0.1 Jun. 1999
The
KM44S32030B
is 134,217,728 bits synchronous high
data rate Dynamic RAM organized as 4 x 8,388,608 words by 4
bits, fabricated with SAMSUNG
′
s high performance CMOS
technology. Synchronous design allows precise cycle control
with the use of system clock I/O transactions are possible on
every clock cycle. Range of operating frequencies, programma-
ble burst length and programmable latencies allow the same
device to be useful for a variety of high bandwidth, high perfor-
mance memory system applications.
JEDEC standard 3.3V power supply
LVTTL compatible with multiplexed address
Four banks operation
MRS cycle with address key programs
-. CAS latency (2 & 3)
-. Burst length (1, 2, 4, 8 Page )
-. Burst type (Sequential & Interleave)
All inputs are sampled at the positive going edge of the system
clock.
Burst read single-bit write operation
DQM for masking
Auto & self refresh
64ms refresh period (4K Cycle)
GENERAL DESCRIPTION
FEATURES
FUNCTIONAL BLOCK DIAGRAM
8M x 4Bit x 4 Banks Synchronous DRAM
Bank Select
Data Input Register
8M x 4
8M x 4
S
O
I
Column Decoder
Latency & Burst Length
Programming Register
A
R
R
R
C
L
L
LCKE
LRAS
LCBR
LWE
LDQM
CLK
CKE
CS
RAS
CAS
WE
DQM
LWE
LDQM
DQi
CLK
ADD
LCAS
LWCBR
8M x 4
8M x 4
Timing Register
* Samsung Electronics reserves the right to change products or specification without notice.
ORDERING INFORMATION
Part No.
Max Freq.
133MHz(CL=3)
125MHz(CL=3)
100MHz(CL=2)
100MHz(CL=3)
Interface Package
KM44S32030BT-G/FA
KM44S32030BT-G/F8
KM44S32030BT-G/FH
KM44S32030BT-G/FL
KM44S32030BT-G/F10 66MHz(CL=2 &3)
LVTTL
54
TSOP(II)
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| KM44S32030 | 8M x 4Bit x 4 Banks Synchronous DRAM(8M x 4位 x 4組同步動態(tài)RAM) |
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| KM44V16004B | 16M x 4Bit CMOS Dynamic RAM with Extended Data Out(16M x 4位CMOS 動態(tài)RAM(帶擴(kuò)展數(shù)據(jù)輸出)) |
| KM44V16104C | 16M x 4Bit CMOS Dynamic RAM with Extended Data Out(16M x 4位CMOS 動態(tài)RAM(帶擴(kuò)展數(shù)據(jù)輸出)) |
| KM44V16004C | 16M x 4Bit CMOS Dynamic RAM with Extended Data Out(16M x 4位CMOS 動態(tài)RAM(帶擴(kuò)展數(shù)據(jù)輸出)) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM44S32030BT-G/F10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL |
| KM44S32030BT-G/F8 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL |
| KM44S32030BT-G/FA | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL |
| KM44S32030BT-G/FH | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL |
| KM44S32030BT-G/FL | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL |
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