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參數(shù)資料
| 型號： | KM48C514D |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | High Speed 512K x 8Bit CMOS Dynamic RAM with Extended Data Out(高速512K x 8位 CMOS 動態(tài)RAM(帶擴展數(shù)據(jù)輸出)) |
| 中文描述： | 高速的擴展數(shù)據(jù)輸出（高速為512k × 8位的CMOS動態(tài)隨機存儲器（帶擴展數(shù)據(jù)輸出）的CMOS為512k × 8位動態(tài)隨機存儲器） |
| 文件頁數(shù)： | 1/21頁 |
| 文件大?。?/td> | 393K |
| 代理商： | KM48C514D |
KM48C514D
CMOS DRAM
High Speed
This is a family of 524,288 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access
of memory cells within the same row. Access time (-4), power consumption(Normal or Low power) and package type(SOJ or TSOP-II)
are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities.
Furthermore, Self-refresh operation is available in L-version. This 512Kx8 EDO Mode DRAM family is fabricated using Samsung
′
s
advanced CMOS process to realize high band-width, low power consumption and high reliability.
It may be used as main memory unit for microcomputer, personal computer and portable machines.
Part Identification
- KM48C514D/DL (5V, 1K Ref.)
Extended Data Out Mode operation
Byte Read/Write operation
CAS-before-RAS refresh capability
RAS-only and Hidden refresh capability
Self-refresh capability (L-ver only)
TTL compatible inputs and outputs
Early Write or output enable controlled write
JEDEC Standard pinout
Available in 28-pin SOJ 400mil & 28-pin TSOP(II)
400mil packages
Dual +5V
±
10% power supply
Control
Clocks
VBB Generator
Refresh Timer
Refresh Control
Refresh Counter
Row Address Buffer
Col. Address Buffer
Row Decoder
Column Decoder
RAS
CAS
W
Vcc
Vss
DQ0
to
DQ7
Memory Array
524,288 x8
Cells
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to
change products and specifications without notice.
High Speed 512K x 8Bit CMOS Dynamic RAM with Extended Data Out
DESCRIPTION
FEATURES
FUNCTIONAL BLOCK DIAGRAM
Refresh Cycles
Part
NO.
V
CC
Refresh
cycle
Refresh period
Normal
16ms
L-ver
128ms
C514D
5V
1K
Performance Range
Speed
-4
t
RAC
40ns
t
CAC
13ns
t
RC
69ns
t
HPC
17ns
Active Power Dissipation
Speed
-4
Active Power Dissipation
770
Unit : mW
S
Data out
Buffer
Data in
Buffer
OE
A0 - A9
A0 - A8
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