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參數(shù)資料
| 型號(hào)： | KM48C8000B |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 8M x 8bit CMOS Dynamic RAM with Fast Page Mode(8M x 8位CMOS 動(dòng)態(tài)RAM(帶快速頁(yè)模式)) |
| 中文描述： | 8米× 8位的快速頁(yè)面模式的CMOS動(dòng)態(tài)RAM（8米× 8位的CMOS動(dòng)態(tài)隨機(jī)存儲(chǔ)器（帶快速頁(yè)模式）） |
| 文件頁(yè)數(shù)： | 6/20頁(yè) |
| 文件大?。?/td> | 320K |
| 代理商： | KM48C8000B |
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KM48C8000B,
KM48C8100B
CMOS DRAM
AC CHARACTERISTICS
(Continued)
Parameter
Symbol
-45
-5
-6
Units
Note
Min
Max
Min
Max
Min
Max
Refresh period (4K, Normal)
t
REF
t
REF
64
64
64
ms
Refresh period (8K, Normal)
64
64
64
ms
Write command set-up time
t
WCS
t
CWD
0
0
0
ns
7
CAS to W delay time
32
36
38
ns
7
RAS to W delay time
t
RWD
t
AWD
67
73
83
ns
7
Column address to W delay time
43
48
53
ns
7
CAS precharge W delay time
t
CPWD
t
CSR
48
53
60
ns
CAS set-up time (CAS -before-RAS refresh)
5
5
5
ns
CAS hold time (CAS -before-RAS refresh)
t
CHR
t
RPC
10
5
5
ns
RAS to CAS precharge time
5
5
5
ns
Access time from CAS precharge
t
CPA
t
PC
26
30
35
ns
3
Fast Page mode cycle time
31
35
40
ns
Fast Page mode read-modify-write cycle time
t
PRWC
t
CP
70
76
85
ns
CAS precharge time (Fast Page cycle)
9
10
10
ns
RAS pulse width (Fast Page cycle)
t
RASP
t
RHCP
45
200K
50
200K
60
200K
ns
RAS hold time from CAS precharge
28
30
35
ns
OE access time
t
OEA
t
OED
12
13
15
ns
OE to data delay
12
13
13
ns
Output buffer turn off delay time from OE
t
OEZ
t
OEH
0
13
0
13
0
13
ns
6
OE command hold time
12
13
15
ns
Write command set-up time (Test mode in)
t
WTS
t
WTH
10
10
10
ns
11
Write command hold time (Test mode in)
15
15
15
ns
11
W to RAS precharge time (C-B-R refresh)
t
WRP
t
WRH
10
10
10
ns
W to RAS hold time (C-B-R refresh)
10
10
10
ns
RAS pulse width (C-B-R self refresh)
t
RASS
t
RPS
t
CHS
100
100
100
us
13,14,15
RAS precharge time (C-B-R self refresh)
80
90
110
ns
13,14,15
CAS hold time (C-B-R self refresh)
-50
-50
-50
ns
13,14,15
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