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參數資料
| 型號： | KM48C8100B |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 8M x 8bit CMOS Dynamic RAM with Fast Page Mode(8M x 8位CMOS 動態(tài)RAM(帶快速頁模式)) |
| 中文描述： | 8米× 8位的快速頁面模式的CMOS動態(tài)RAM（8米× 8位的CMOS動態(tài)隨機存儲器（帶快速頁模式）） |
| 文件頁數： | 1/20頁 |
| 文件大?。?/td> | 320K |
| 代理商： | KM48C8100B |
KM48C8000B,
KM48C8100B
CMOS DRAM
This is a family of 8,388,608 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells
within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -5 or -6), package type (SOJ or TSOP-II) are optional features
of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. This 8Mx8 Fast Page
Mode DRAM family is fabricated using Samsung
′
s advanced CMOS process to realize high band-width, low power consumption and
high reliability.
Part Identification
- KM48C8000B(5.0V, 8K Ref.)
- KM48C8100B(5.0V, 4K Ref.)
Fast Page Mode operation
CAS-before-RAS refresh capability
RAS-only and Hidden refresh capability
Fast parallel test mode capability
TTL(5.0V) compatible inputs and outputs
Early Write or output enable controlled write
JEDEC Standard pinout
Available in Plastic SOJ and TSOP(II) packages
+5.0V
±
10% power supply
Control
Clocks
RAS
CAS
W
Vcc
Vss
A0~A12
(A0~A11)*1
A0~A9
(A0~A10)*1
Memory Array
8,388,608 x 8
Cells
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to
change products and specifications without notice.
8M x 8bit CMOS Dynamic RAM with Fast Page Mode
DESCRIPTION
FEATURES
FUNCTIONAL BLOCK DIAGRAM
Note) *1 : 4K Refresh
Refresh Cycles
Part
NO.
Refresh
cycle
Refresh time
Normal
KM48C8000B*
KM48C8100B
8K
4K
64ms
Performance Range
Speed
-45
-5
-6
t
RAC
45ns
50ns
60ns
t
CAC
12ns
13ns
15ns
t
RC
80ns
90ns
110ns
t
PC
31ns
35ns
40ns
Active Power Dissipation
Speed
-45
-5
-6
8K
550
495
440
4K
715
660
605
Unit : mW
S
DQ0
to
DQ7
Data out
Buffer
Data in
Buffer
*
Access mode & RAS only refresh mode
: 8K cycle/64ms
CAS-before-RAS & Hidden refresh mode
: 4K cycle/64ms
Row Decoder
Column Decoder
VBB Generator
Refresh Timer
Refresh Control
Refresh Counter
Row Address Buffer
Col. Address Buffer
OE
相關PDF資料 |
PDF描述 |
|---|---|
| KM48C8000B | 8M x 8bit CMOS Dynamic RAM with Fast Page Mode(8M x 8位CMOS 動態(tài)RAM(帶快速頁模式)) |
| KM48C8104B | 8M x 8bit CMOS Dynamic RAM with Extended Data Out(8M x 8位CMOS 動態(tài)RAM(帶擴展數據輸出)) |
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| KM48S16030B | 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL |
| KM48S16030 | 4M x 8Bit x 4 Banks Synchronous DRAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| KM48C8104B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8bit CMOS Dynamic RAM with Extended Data Out |
| KM-48F 50UA DC | 制造商:Fujita Electric 功能描述: |
| KM-48F 0-50MV DC | 制造商:Fujita Electric 功能描述: |
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