參數(shù)資料
型號(hào): KM48C8100B
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 8M x 8bit CMOS Dynamic RAM with Fast Page Mode(8M x 8位CMOS 動(dòng)態(tài)RAM(帶快速頁(yè)模式))
中文描述: 8米× 8位的快速頁(yè)面模式的CMOS動(dòng)態(tài)RAM(8米× 8位的CMOS動(dòng)態(tài)隨機(jī)存儲(chǔ)器(帶快速頁(yè)模式))
文件頁(yè)數(shù): 4/20頁(yè)
文件大?。?/td> 320K
代理商: KM48C8100B
KM48C8000B,
KM48C8100B
CMOS DRAM
*Note :
I
CC1
, I
CC3
, I
CC4
and I
CC6
are dependent on output loading and cycle rates. Specified values are obtained with the output open.
I
CC
is specified as an average current. In I
CC1
, I
CC3
and I
CC6,
address can be changed maximum once while RAS=V
IL
. In I
CC4
,
address can be changed maximum once within one fast page mode cycle time,
t
PC
.
DC AND OPERATING CHARACTERISTICS
(Continued)
I
CC1
* : Operating Current (RAS and CAS, Address cycling @
t
RC
=min.)
I
CC2
: Standby Current (RAS=CAS=W=V
IH
)
I
CC3
* : RAS-only Refresh Current (CAS=V
IH
, RAS, Address cycling @
t
RC
=min.)
I
CC4
* : Fast Page Mode Current (RAS=V
IL
, CAS, Address cycling @
t
PC
=min.)
I
CC5
: Standby Current (RAS=CAS=W=V
CC
-0.2V)
I
CC6
* : CAS-Before-RAS Refresh Current (RAS and CAS cycling @
t
RC
=min)
Symbol
Power
Speed
Max
Units
KM48C8000B
KM48C8100B
I
CC1
Don
t care
-45
-5
-6
100
90
80
130
120
110
mA
mA
mA
I
CC2
Normal
Don
t care
2
2
mA
I
CC3
Don
t care
-45
-5
-6
100
90
80
130
120
110
mA
mA
mA
I
CC4
Don
t care
-45
-5
-6
70
60
50
80
70
60
mA
mA
mA
I
CC5
Normal
Don
t care
1
1
mA
I
CC6
Don
t care
-45
-5
-6
100
90
80
130
120
110
mA
mA
mA
相關(guān)PDF資料
PDF描述
KM48C8000B 8M x 8bit CMOS Dynamic RAM with Fast Page Mode(8M x 8位CMOS 動(dòng)態(tài)RAM(帶快速頁(yè)模式))
KM48C8104B 8M x 8bit CMOS Dynamic RAM with Extended Data Out(8M x 8位CMOS 動(dòng)態(tài)RAM(帶擴(kuò)展數(shù)據(jù)輸出))
KM48S16030A 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
KM48S16030B 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
KM48S16030 4M x 8Bit x 4 Banks Synchronous DRAM
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