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參數(shù)資料
| 型號： | KM48V8000B |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 8M x 8Bit CMOS Dynamic RAM with Fast Page Mode(8M x 8位 CMOS 動態(tài)RAM(帶快速頁模式)) |
| 中文描述： | 8米× 8位的快速頁面模式的CMOS動態(tài)RAM（8米× 8位的CMOS動態(tài)隨機(jī)存儲器（帶快速頁模式）） |
| 文件頁數(shù)： | 5/20頁 |
| 文件大?。?/td> | 322K |
| 代理商： | KM48V8000B |
KM48V8000B,
KM48V8100B
CMOS DRAM
CAPACITANCE
(T
A
=25
°
C, V
CC
=3.3V, f=1MHz)
Parameter
Symbol
Min
Max
Units
Input capacitance [A0 ~ A12]
C
IN1
-
5
pF
Input capacitance [RAS, CAS, W, OE]
C
IN2
-
7
pF
Output capacitance [DQ0 - DQ7]
C
DQ
-
7
pF
Test condition : V
CC
=3.3V
±
0.3V, Vih/Vil=2.2/0.7V, Voh/Vol=2.0/0.8V
Parameter
Symbol
-45
-5
-6
Units
Note
Min
Max
Min
Max
Min
Max
Random read or write cycle time
t
RC
80
90
110
ns
Read-modify-write cycle time
t
RWC
t
RAC
115
133
153
ns
Access time from RAS
45
50
60
ns
3,4,10
Access time from CAS
t
CAC
t
AA
12
13
15
ns
3,4,5
Access time from column address
23
25
30
ns
3,10
CAS to output in Low-Z
t
CLZ
t
OFF
0
0
0
ns
3
Output buffer turn-off delay
0
13
0
13
0
13
ns
6
Transition time (rise and fall)
t
T
t
RP
1
50
1
50
1
50
ns
2
RAS precharge time
25
30
40
ns
RAS pulse width
t
RAS
t
RSH
45
10K
50
10K
60
10K
ns
RAS hold time
12
13
15
ns
CAS hold time
t
CSH
t
CAS
45
50
60
ns
CAS pulse width
12
10K
13
10K
15
10K
ns
RAS to CAS delay time
t
RCD
t
RAD
18
33
20
37
20
45
ns
4
RAS to column address delay time
13
22
15
25
15
30
ns
10
CAS to RAS precharge time
t
CRP
t
ASR
5
5
5
ns
Row address set-up time
0
0
0
ns
Row address hold time
t
RAH
t
ASC
8
10
10
ns
Column address set-up time
0
0
0
ns
Column address hold time
t
CAH
t
RAL
8
10
10
ns
Column address to RAS lead time
23
25
30
ns
Read command set-up time
t
RCS
t
RCH
0
0
0
ns
Read command hold time referenced to CAS
0
0
0
ns
8
Read command hold time referenced to RAS
t
RRH
t
WCH
0
0
0
ns
8
Write command hold time
8
10
10
ns
Write command pulse width
t
WP
t
RWL
8
10
10
ns
Write command to RAS lead time
13
15
15
ns
Write command to CAS lead time
t
CWL
t
DS
12
13
15
ns
Data set-up time
0
0
0
ns
9
Data hold time
t
DH
10
10
10
ns
9
AC CHARACTERISTICS
(0
°
C
≤
T
A
≤
70
°
C, See note 1,2)
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