參數(shù)資料
型號(hào): KM6161000B
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 64K x16 Bit Low Power CMOS Static RAM(64K x16位低功耗 CMOS 靜態(tài)RAM)
中文描述: 64K的x16位低功耗CMOS靜態(tài)RAM(64K的x16位低功耗的CMOS靜態(tài)RAM)的
文件頁(yè)數(shù): 3/9頁(yè)
文件大?。?/td> 135K
代理商: KM6161000B
KM6161000B Family
CMOS SRAM
Revision 2.0
February 1998
3
PRODUCT LIST
Commercial Temperature Product(0~70
°
C)
Industrial Temperature Products(-40~85
°
C)
Part Name
Function
Part Name
Function
KM6161000BLT-5L
KM6161000BLT-7L
KM6161000BLR-5L
KM6161000BLR-7L
44-TSOP2-F, 5V, 55ns, LL-pwr
44-TSOP2-F, 5V, 70ns, LL-pwr
44-TSOP2-R, 5V, 55ns, LL-pwr
44-TSOP2-R, 5V, 70ns, LL-pwr
KM6161000BLTI-7L
KM6161000BLTI-10L
KM6161000BLRI-7L
KM6161000BLRI-10L
44-TSOP2-F, 5V, 70ns, LL-pwr
44-TSOP2-F, 5V, 100ns, LL-pwr
44-TSOP2-R, 5V, 70ns, LL-pwr
44-TSOP2-R, 5V, 100ns, LL-pwr
ABSOLUTE MAXIMUM RATINGS
1)
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be
restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Item
Symbol
Ratings
Unit
Remark
Voltage on any pin relative to Vss
V
IN
,V
OUT
-0.5 to Vcc+0.5
V
-
Voltage on Vcc supply relative to Vss
V
CC
-0.5 to 7.0
V
-
Power Dissipation
P
D
1.0
W
-
Storage temperature
T
STG
-65 to 150
°
C
°
C
°
C
-
Operating Temperature
T
A
0 to 70
KM6161000BL-L
-40 to 85
KM6161000BLI-L
Soldering temperature and time
T
SOLDER
260
°
C, 10sec(Lead Only)
-
-
FUNCTIONAL DESCRIPTION
1. X means don
t care. (Must be in low or high state)
CS
OE
WE
LB
UB
I/O
1~8
I/O
9~16
Mode
Power
H
X
1)
X
1)
X
1)
X
1)
High-Z
High-Z
Deselected
Standby
L
H
H
X
1)
X
1)
High-Z
High-Z
Output Disabled
Active
L
X
1)
X
1)
H
H
High-Z
High-Z
Output Disabled
Active
L
L
H
L
H
Dout
High-Z
Lower Byte Read
Active
L
L
H
H
L
High-Z
Dout
Upper Byte Read
Active
L
L
H
L
L
Dout
Dout
Word Read
Active
L
X
1)
L
L
H
Din
High-Z
Lower Byte Write
Active
L
X
1)
L
H
L
High-Z
Din
Upper Byte Write
Active
L
X
1)
L
L
L
Din
Din
Word Write
Active
相關(guān)PDF資料
PDF描述
KM6161002A 64K x 16 Bit High-Speed CMOS Static RAM(64K x 16位高速CMOS 靜態(tài)RAM)
KM6161002AI 64K x 16 Bit High-Speed CMOS Static RAM(64K x 16位高速CMOS 靜態(tài)RAM)
KM6161002B 64K x 16 Bit High-Speed CMOS Static RAM(64K x 16位高速CMOS 靜態(tài)RAM)
KM6161002BI 64K x 16 Bit High-Speed CMOS Static RAM(64K x 16位高速CMOS 靜態(tài)RAM)
KM6161002C 64K x 16 Bit High-Speed CMOS Static RAM(64K x 16位高速CMOS 靜態(tài)RAM)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KM6161002A 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64K x 16 Bit Speed Static RAM (5V Operating), Revolutionary Pin Out
KM6161002A-12 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64K x 16 Bit Speed Static RAM (5V Operating), Revolutionary Pin Out
KM6161002A-15 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64K x 16 Bit Speed Static RAM (5V Operating), Revolutionary Pin Out
KM6161002A-20 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64K x 16 Bit Speed Static RAM (5V Operating), Revolutionary Pin Out
KM6161002AI 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64K x 16 Bit Speed Static RAM (5V Operating), Revolutionary Pin Out