- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374356 > KM6161000B (SAMSUNG SEMICONDUCTOR CO. LTD.) 64K x16 Bit Low Power CMOS Static RAM(64K x16位低功耗 CMOS 靜態(tài)RAM) PDF資料下載
參數(shù)資料
| 型號： | KM6161000B |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 64K x16 Bit Low Power CMOS Static RAM(64K x16位低功耗 CMOS 靜態(tài)RAM) |
| 中文描述： | 64K的x16位低功耗CMOS靜態(tài)RAM（64K的x16位低功耗的CMOS靜態(tài)RAM）的 |
| 文件頁數(shù)： | 8/9頁 |
| 文件大?。?/td> | 135K |
| 代理商： | KM6161000B |
KM6161000B Family
CMOS SRAM
Revision 2.0
February 1998
8
Address
CS
Data Valid
UB, LB
WE
Data in
Data out
High-Z
High-Z
TIMING WAVEFORM OF WRITE CYCLE(3)
(UB, LB Controlled)
NOTES
(WRITE CYCLE)
1. A wri
t
e occurs during the overlap(t
WP
) of low CS and low WE. A write begins when CS goes low and WE goes low with asserting UB
or LB for single byte operation or simultaneously asserting UB and LB for double byte operation. A write ends at the earliest transi-
tion when CS goes high and WE goes high. The
t
WP
is measured from the beginning of write to the end of write.
2.
t
CW
is measured from the CS going low to end of write.
3.
t
AS
is measured from the address valid to the beginning of write.
4.
t
WR
is measured from the end or write to the address change.
t
WR
applied in case a write ends as CS or WE going high.
t
WC
t
CW(2)
t
BW
t
WP(1)
t
DH
t
DW
t
WR(4)
t
AW
DATA RETENTION WAVE FORM
CS controlled
V
CC
4.5V
2.2V
V
DR
CS
GND
Data Retention Mode
CS
≥
V
CC
- 0.2V
t
SDR
t
RDR
t
AS(3)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM6161002A | 64K x 16 Bit High-Speed CMOS Static RAM(64K x 16位高速CMOS 靜態(tài)RAM) |
| KM6161002AI | 64K x 16 Bit High-Speed CMOS Static RAM(64K x 16位高速CMOS 靜態(tài)RAM) |
| KM6161002B | 64K x 16 Bit High-Speed CMOS Static RAM(64K x 16位高速CMOS 靜態(tài)RAM) |
| KM6161002BI | 64K x 16 Bit High-Speed CMOS Static RAM(64K x 16位高速CMOS 靜態(tài)RAM) |
| KM6161002C | 64K x 16 Bit High-Speed CMOS Static RAM(64K x 16位高速CMOS 靜態(tài)RAM) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM6161002A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64K x 16 Bit Speed Static RAM (5V Operating), Revolutionary Pin Out |
| KM6161002A-12 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64K x 16 Bit Speed Static RAM (5V Operating), Revolutionary Pin Out |
| KM6161002A-15 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64K x 16 Bit Speed Static RAM (5V Operating), Revolutionary Pin Out |
| KM6161002A-20 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64K x 16 Bit Speed Static RAM (5V Operating), Revolutionary Pin Out |
| KM6161002AI | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64K x 16 Bit Speed Static RAM (5V Operating), Revolutionary Pin Out |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。