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參數(shù)資料
| 型號： | KM6161002B |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 64K x 16 Bit High-Speed CMOS Static RAM(64K x 16位高速CMOS 靜態(tài)RAM) |
| 中文描述： | 64K的× 16位高速CMOS靜態(tài)RAM（64K的× 16位高速的CMOS靜態(tài)RAM）的 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大小： | 149K |
| 代理商： | KM6161002B |
KM6161002B, KM6161002BI
CMOS SRAM
Rev 2.0
- 2 -
February 1998
PIN FUNCTION
Pin Name
Pin Function
A
0
- A
15
Address Inputs
WE
Write Enable
CS
Chip Select
OE
Output Enable
LB
Lower-byte Control(I/O
1
~I/O
8
)
UB
Upper-byte Control(I/O
9
~I/O
16
)
I/O
1
~ I/O
16
Data Inputs/Outputs
V
CC
Power(+5.0V)
V
SS
Ground
N.C
No Connection
64K x 16 Bit High-Speed CMOS Static RAM
FEATURES
Fast Access Time 8,10,12ns(Max.)
Low Power Dissipation
Standby (TTL) : 50mA(Max.)
(CMOS) : 10mA(Max.)
Operating KM6161002B - 8 : 200mA(Max.)
KM6161002B - 10 : 195mA(Max.)
KM6161002B - 12 : 190mA(Max.)
Single 5.0V
±
10% Power Supply
TTL Compatible Inputs and Outputs
I/O Compatible with 3.3V Device
Fully Static Operation
- No Clock or Refresh required
Three State Outputs
Center Power/Ground Pin Configuration
Data Byte Control : LB : I/O
1
~ I/O
8,
UB : I/O
9
~ I/O
16
Standard Pin Configuration
KM6161002BJ : 44-SOJ-400
KM6161002BT : 44-TSOP2-400F
The KM6161002B is a 1,048,576-bit high-speed Static Random
Access Memory organized as 65,536 words by 16 bits. The
KM6161002B uses 16 common input and output lines and has
at output enable pin which operates faster than address access
time at read cycle. Also it allows that lower and upper byte
access by data byte control (UB, LB). The device is fabricated
using SAMSUNG
′
s advanced CMOS process and designed for
high-speed circuit technology. It is particularly well suited for
use in high-density high-speed system applications. The
KM6161002B is packaged in a 400mil 44-pin plastic SOJ or
TSOP2 forward.
GENERAL DESCRIPTION
Clk Gen.
I/O
1
~I/O
8
OE
UB
LB
CS
PIN CONFIGURATION
(Top View)
SOJ/
FUNCTIONAL BLOCK DIAGRAM
TSOP2
R
Data
Cont.
Column Select
A
10
A
11
A
12
A
13
A
14
A
15
CLK
Gen.
Pre-Charge Circuit
Memory Array
256 Rows
256x16 Columns
I/O Circuit &
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
A
15
A
14
A
13
OE
UB
LB
I/O
16
I/O
15
I/O
14
I/O
13
Vss
Vcc
I/O
12
I/O
11
I/O
10
I/O
9
N.C.
A
12
A
11
A
10
A
9
N.C.
A
0
A
1
A
2
A
3
A
4
CS
I/O
1
I/O
2
I/O
3
I/O
4
Vcc
Vss
I/O
5
I/O
6
I/O
7
I/O
8
WE
A
5
A
6
A
7
A
8
N.C.
A
0
A
1
A
2
A
3
A
4
I/O
9
~I/O
16
Data
Cont.
WE
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
KM6161002B -8/10/12
Commercial Temp.
KM6161002BI -8/10/12
Industrial Temp.
ORDERING INFORMATION
A
5
A
6
A
7
A
8
A
9
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM6161002BI | 64K x 16 Bit High-Speed CMOS Static RAM(64K x 16位高速CMOS 靜態(tài)RAM) |
| KM6161002C | 64K x 16 Bit High-Speed CMOS Static RAM(64K x 16位高速CMOS 靜態(tài)RAM) |
| KM6161002CI | 64K x 16 Bit High-Speed CMOS Static RAM(64K x 16位高速CMOS 靜態(tài)RAM) |
| KM6164002A | 256Kx16 bit Low Power CMOS Static RAM(256Kx16位低功耗CMOS 靜態(tài) RAM) |
| KM6164002AE | 256Kx16 bit Low Power CMOS Static RAM(256Kx16位低功耗CMOS 靜態(tài) RAM) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM6161002B-10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Kx16 Bit High Speed Static RAM(5.0V Operating), Revolutionary Pin out. |
| KM6161002B-12 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Kx16 Bit High Speed Static RAM(5.0V Operating), Revolutionary Pin out. |
| KM6161002B-8 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Kx16 Bit High Speed Static RAM(5.0V Operating), Revolutionary Pin out. |
| KM6161002BI | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Kx16 Bit High Speed Static RAM(5.0V Operating), Revolutionary Pin out. |
| KM6161002BI-10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Kx16 Bit High Speed Static RAM(5.0V Operating), Revolutionary Pin out. |
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