參數(shù)資料
型號(hào)： KM6161002BI
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 64K x 16 Bit High-Speed CMOS Static RAM(64K x 16位高速CMOS 靜態(tài)RAM)
中文描述： 64K的× 16位高速CMOS靜態(tài)RAM（64K的× 16位高速的CMOS靜態(tài)RAM）的
文件頁數(shù)： 3/9頁
文件大?。?/td> 149K
代理商： KM6161002BI
KM6161002B, KM6161002BI
CMOS SRAM
Rev 2.0
- 3 -
February 1998
ABSOLUTE MAXIMUM RATINGS*
*
Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Parameter
Symbol
Rating
Unit
Voltage on Any Pin Relative to V
SS
V
IN
,
V
OUT
-0.5 to 7.0
V
Voltage on V
CC
Supply Relative to V
SS
V
CC
-0.5 to 7.0
V
Power Dissipation
P
D
1.0
W
Storage Temperature
T
STG
-65 to 150
°
C
°
C
°
C
Operating Temperature
Commercial
T
A
0 to 70
Industrial
T
A
-40 to 85
RECOMMENDED DC OPERATING CONDITIONS
(T
A
= to 70
°
C)
NOTE: The above parameters are also guaranteed at industrial temperature range.
*
V
IL
(Min) = -2.0V a.c(Pulse Width
≤
6ns) for I
≤
20mA
**
V
IH
(Max) = V
CC +
2.0V a.c (Pulse Width
≤
6ns) for I
≤
20mA
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage
V
CC
4.5
5.0
5.5
V
Ground
V
SS
0
0
0
V
Input High Voltage
V
IH
2.2
-
V
CC
+0.5**
V
Input Low Voltage
V
IL
-0.5*
-
0.8
V
DC AND OPERATING CHARACTERISTICS
(T
A
=0 to 70
°
C, Vcc=5.0V
±
10%, unless otherwise specified)
NOTE: The above parameters are also guaranteed at industrial temperature range.
* V
CC
=5.0V, Temp.=25
°
C
Parameter
Symbol
Test Conditions
Min
Max
Unit
Input Leakage Current
I
LI
V
IN
=V
SS
to
V
CC
-2
2
μ
A
μ
A
Output Leakage Current
I
LO
CS=V
IH
or OE=V
IH
or WE=V
IL
V
OUT
=V
SS
to
V
CC
-2
2
Operating Current
I
CC
Min. Cycle, 100% Duty
CS=V
IL,
V
IN
= V
IH
or
V
IL,
I
OUT
=0mA
8ns
-
200
mA
10ns
-
195
12ns
-
190
Standby Current
I
SB
Min. Cycle, CS=V
IH
-
50
mA
I
SB1
f=0MHz, CS
≥
V
CC
-0.2V,
V
IN
≥
V
CC
-0.2V or V
IN
≤
0.2V
-
10
mA
Output Low Voltage Level
V
OL
I
OL
=8mA
-
0.4
V
Output High Voltage Level
V
OH
I
OH
=-4mA
2.4
-
V
V
OH1
*
I
OH1
=-0.1mA
-
3.95
V
CAPACITANCE*
(T
A
=25
°
C
, f=1.0MHz)
* NOTE : Capacitance is sampled and not 100% tested.
Item
Symbol
Test Conditions
MIN
Max
Unit
Input/Output Capacitance
C
I/O
V
I/O
=0V
-
8
pF
Input Capacitance
C
IN
V
IN
=0V
-
6
pF
相關(guān)PDF資料
PDF描述
KM6161002C 64K x 16 Bit High-Speed CMOS Static RAM(64K x 16位高速CMOS 靜態(tài)RAM)
KM6161002CI 64K x 16 Bit High-Speed CMOS Static RAM(64K x 16位高速CMOS 靜態(tài)RAM)
KM6164002A 256Kx16 bit Low Power CMOS Static RAM(256Kx16位低功耗CMOS 靜態(tài) RAM)
KM6164002AE 256Kx16 bit Low Power CMOS Static RAM(256Kx16位低功耗CMOS 靜態(tài) RAM)
KM6164002AI 256Kx16 bit Low Power CMOS Static RAM(256Kx16位低功耗CMOS 靜態(tài) RAM)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KM6161002BI-10 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Kx16 Bit High Speed Static RAM(5.0V Operating), Revolutionary Pin out.
KM6161002BI-12 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Kx16 Bit High Speed Static RAM(5.0V Operating), Revolutionary Pin out.
KM6161002BI-8 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Kx16 Bit High Speed Static RAM(5.0V Operating), Revolutionary Pin out.
KM6161002C 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64K x 16 Bit High-Speed CMOS Static RAM (5.0V Operating) Operated at Commercial and Industrial Temperature Range
KM6161002C-12 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64K x 16 Bit High-Speed CMOS Static RAM (5.0V Operating) Operated at Commercial and Industrial Temperature Range
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*