參數(shù)資料
型號(hào): KM6164002
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: CMOS SRAM
中文描述: CMOS SRAM的
文件頁(yè)數(shù): 8/9頁(yè)
文件大?。?/td> 167K
代理商: KM6164002
KM6164002, KM6164002E, KM6164002I
CMOS SRAM
PRELIMINARY
Rev 2.0
June -1997
- 2 -
PIN FUNCTION
Pin Name
A
0
- A
17
WE
CS
OE
LB
UB
I/O
1
~ I/O
16
V
CC
V
SS
Pin Function
Address Inputs
Write Enable
Chip Select
Output Enable
Lower-byte Control(I/O
1
~I/O
8
)
Upper-byte Control(I/O
9
~I/O
16
)
Data Inputs/Outputs
Power(+5.0V)
Ground
256K x 16 Bit High-Speed CMOS Static RAM
FEATURES
ü
Fast Access Time 20,25
§à
(Max.)
ü
Low Power Dissipation
Standby (TTL) : 60
§ì
(Max.)
CMOS) : 10
§ì
(Max.)
Operating KM6164002 - 20 : 240
§ì
(Max.)
KM6164002 - 25 : 220
§ì
(Max.)
ü
Single 5.0V
±
10% Power Supply
ü
TTL Compatible Inputs and Outputs
ü
I/O Compatible with 3.3V Device
ü
Fully Static Operation
- No Clock or Refresh required
ü
Three State Outputs
ü
Center Power/Ground Pin Configuration
ü
Data Byte Control : LB : I/O
1
~ I/O
8,
UB : I/O
9
~ I/O
16
ü
Standard Pin Configuration
KM6164002J : 44-SOJ-400
The KM6164002 is a 4,194,304-bit high-speed Static Random
Access Memory organized as 262,144 words by 16 bits. The
KM6164002 uses 16 common input and output lines and has an
output enable pin which operates faster than address access
time at read cycle. Also it allows that lower and upper byte
access by data byte control (UB, LB). The device is fabricated
using SAMSUNG's advanced CMOS process and designed for
high-speed circuit technology. It is particularly well suited for use
in
high-density
high-speed
KM6164002 is packaged in a 400mil 44-pin plastic SOJ.
system
applications.
The
GENERAL DESCRIPTION
Clk Gen.
I/O
1
~ I/O
8
OE
UB
LB
CS
PIN CONFIGURATION
(Top View)
SOJ
FUNCTIONAL BLOCK DIAGRAM
R
Data
Cont.
Column Select
CLK
Gen.
Pre-Charge Circuit
Memory Array
1048 Rows
256x16 Columns
I/O Circuit &
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
A
17
A
16
A
15
OE
UB
LB
I/O
16
I/O
15
I/O
14
I/O
13
Vss
Vcc
I/O
12
I/O
11
I/O
10
I/O
9
N.C
A
14
A
13
A
12
A
11
A
10
A
0
A
1
A
2
A
3
A
4
CS
I/O
1
I/O
2
I/O
3
I/O
4
Vcc
Vss
I/O
5
I/O
6
I/O
7
I/O
8
WE
A
5
A
6
A
7
A
8
A
9
I/O
9
~ I/O
16
Data
Cont.
WE
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A
0
A
1
A
2
A
3
A
4
A
6
A
7
A
8
A
12
A
13
KM6164002 -20/25
Commercial Temp.
KM6164002E -20/25
Extended Temp.
KM6164002I -20/25
Industrial Temp.
ORDERING INFORMATION
A
5
A
9
A
10
A
11
A
14
A
15
A
16
A
17
相關(guān)PDF資料
PDF描述
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KM616FR4110 256K x 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM(256K x 16位超低功耗低電壓CMOS 靜態(tài)RAM)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KM6164002AJ-20 制造商:SEC 功能描述:
KM6164002E 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:CMOS SRAM
KM6164002I 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:CMOS SRAM
KM6164002J-20 FAB 制造商:Samsung Semiconductor 功能描述:
KM616B4002J-12 制造商:SEC 功能描述: