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參數(shù)資料
| 型號(hào)： | KM6164002A |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Kx16 bit Low Power CMOS Static RAM(256Kx16位低功耗CMOS 靜態(tài) RAM) |
| 中文描述： | 256Kx16位低功耗CMOS靜態(tài)RAM（256Kx16位低功耗的CMOS靜態(tài)RAM）的 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 132K |
| 代理商： | KM6164002A |
KM6164002A, KM6164002AE, KM6164002AI
CMOS SRAM
PRELIMINARY
Rev 2.0
- 1 -
February 1998
Document Title
256Kx16 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out.
Operated at Commercial Temperature Range.
Revision History
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
Rev No.
Rev. 0.0
Rev. 0.5
Rev. 1.0
Rev.2.0
Remark
Design Target
Preliminary
Final
Final
History
Initial release with Design Target.
Release to Preliminary Data Sheet.
0.1. Replace Design Target to Preliminary.
0.2. Delete 12ns part but add 17ns part.
0.3. Relax D.C and A.C parameters and insert new parameter(Icc
1
)
with the test condition.
0.3.1. Insert Icc
1
parameter with the test condition as address is
increased with binary count.
0.3.2. Relax D.C and A.C parameters.
Previous spec.
(15/ - /20ns part)
Icc
250/ - /240mA
t
CW
10/ - /12ns
t
AW
10/ - /12ns
t
WP
(OE=H)
10/ - /12ns
t
WP1
(OE=L)
12/ - /14ns
t
DW
7/ - /9ns
Release to Final Data Sheet.
1.1. Delete Preliminary.
1.2. Delete Icc1 parameter with the test condition.
1.3. Update D.C parameters.
1.4. Add the test condition for V
OH1
with Vcc=5V
±
5% at 25
°
C
1.5. Add timing diagram to define t
WP1
as
″(
Timing Wave Form of
Write Cycle(OE=Low fixed)
″
2.1 Add extended and industrial temperature range parts.
Items
Relaxed spec.
(15/17/20ns part)
280/275/270mA
12/13/14ns
12/13/14ns
12/13/14ns
15/17/20ns
8/9/10ns
Items
Previous spec.
(15/17/20ns part)
280/275/270mA
Updated spec.
(15/17/20ns part)
210/205/200mA
Icc
Draft Data
Jun. 14th, 1996
Sep. 16th, 1996
Jun. 5th, 1997
Feb. 25th, 1998
相關(guān)PDF資料 |
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| KM6164002AE | 256Kx16 bit Low Power CMOS Static RAM(256Kx16位低功耗CMOS 靜態(tài) RAM) |
| KM6164002AI | 256Kx16 bit Low Power CMOS Static RAM(256Kx16位低功耗CMOS 靜態(tài) RAM) |
| KM6164002B | 256K x 16 Bit High-Speed CMOS Static RAM(256Kx16位低功耗CMOS 靜態(tài) RAM) |
| KM6164002BI | 256K x 16 Bit High-Speed CMOS Static RAM(256Kx16位低功耗CMOS 靜態(tài) RAM) |
| KM6164002 | CMOS SRAM |
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| KM6164002AJ-20 | 制造商:SEC 功能描述: |
| KM6164002E | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:CMOS SRAM |
| KM6164002I | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:CMOS SRAM |
| KM6164002J-20 FAB | 制造商:Samsung Semiconductor 功能描述: |
| KM616B4002J-12 | 制造商:SEC 功能描述: |
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