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參數資料
| 型號： | KM6164002AE |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Kx16 bit Low Power CMOS Static RAM(256Kx16位低功耗CMOS 靜態(tài) RAM) |
| 中文描述： | 256Kx16位低功耗CMOS靜態(tài)RAM（256Kx16位低功耗的CMOS靜態(tài)RAM）的 |
| 文件頁數： | 5/9頁 |
| 文件大?。?/td> | 132K |
| 代理商： | KM6164002AE |
KM6164002A, KM6164002AE, KM6164002AI
CMOS SRAM
PRELIMINARY
Rev 2.0
- 5 -
February 1998
WRITE CYCLE
NOTE: The above parameters are also guaranteed at extended and industrial temperature ranges.
Parameter
Symbol
KM6164002A-15
KM6164002A-17
KM6164002A-20
Unit
Min
Max
Min
Max
Min
Max
Write Cycle Time
t
WC
15
-
17
-
20
-
ns
Chip Select to End of Write
t
CW
12
-
13
-
14
-
ns
Address Set-up Time
t
AS
0
-
0
-
0
-
ns
Address Valid to End of Write
t
AW
12
-
13
-
14
-
ns
Write Pulse Width(OE High)
t
WP
12
-
13
-
14
-
ns
Write Pulse Width(OE Low)
t
WP1
15
-
17
-
20
-
ns
UB, LB Valid to End of Write
t
BW
12
-
13
-
14
-
ns
Write Recovery Time
t
WR
0
-
0
-
0
-
ns
Write to Output High-Z
t
WHZ
0
7
0
8
0
9
ns
Data to Write Time Overlap
t
DW
8
-
9
-
10
-
ns
Data Hold from Write Time
t
DH
0
-
0
-
0
-
ns
End Write to Output Low-Z
t
OW
3
-
3
-
3
-
ns
Address
Data Out
Previous Valid Data
Valid Data
TIMMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1)
(Address Controlled
,
CS=OE=V
IL
, WE=V
IH
, UB, LB=V
IL
)
t
AA
t
RC
t
OH
相關PDF資料 |
PDF描述 |
|---|---|
| KM6164002AI | 256Kx16 bit Low Power CMOS Static RAM(256Kx16位低功耗CMOS 靜態(tài) RAM) |
| KM6164002B | 256K x 16 Bit High-Speed CMOS Static RAM(256Kx16位低功耗CMOS 靜態(tài) RAM) |
| KM6164002BI | 256K x 16 Bit High-Speed CMOS Static RAM(256Kx16位低功耗CMOS 靜態(tài) RAM) |
| KM6164002 | CMOS SRAM |
| KM6164002E | CMOS SRAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| KM6164002AJ-20 | 制造商:SEC 功能描述: |
| KM6164002E | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:CMOS SRAM |
| KM6164002I | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:CMOS SRAM |
| KM6164002J-20 FAB | 制造商:Samsung Semiconductor 功能描述: |
| KM616B4002J-12 | 制造商:SEC 功能描述: |
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