參數(shù)資料
型號(hào): KM6164002AI
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 256Kx16 bit Low Power CMOS Static RAM(256Kx16位低功耗CMOS 靜態(tài) RAM)
中文描述: 256Kx16位低功耗CMOS靜態(tài)RAM(256Kx16位低功耗的CMOS靜態(tài)RAM)的
文件頁數(shù): 4/9頁
文件大?。?/td> 132K
代理商: KM6164002AI
KM6164002A, KM6164002AE, KM6164002AI
CMOS SRAM
PRELIMINARY
Rev 2.0
- 4 -
February 1998
TEST CONDITIONS
NOTE: The above parameters are also guaranteed at extended and industrial temperature ranges.
Parameter
Value
Input Pulse Levels
0V to 3V
Input Rise and Fall Times
3ns
Input and Output timing Reference Levels
1.5V
Output Loads
See below
AC CHARACTERISTICS
(T
A
=0 to 70
°
C, V
CC
=5.0V
±
10%, unless otherwise noted.)
Output Loads(A)
Output Loads(B)
for t
HZ
, t
LZ
, t
WHZ
, t
OW
, t
OLZ
& t
OHZ
D
OUT
5pF*
480
255
+5.0V
D
OUT
30pF*
480
255
+5.0V
* Including Scope and Jig Capacitance
READ CYCLE
NOTE: The above parameters are also guaranteed at extended and industrial temperature ranges.
Parameter
Symbol
KM6164002A-15
KM6164002A-17
KM6164002A-20
Unit
Min
Max
Min
Max
Min
Max
Read Cycle Time
t
RC
15
-
17
-
20
-
ns
Address Access Time
t
AA
-
15
-
17
-
20
ns
Chip Select to Output
t
CO
-
15
-
17
-
20
ns
Output Enable to Valid Output
t
OE
-
7
-
8
-
9
ns
UB, LB Access Time
t
BA
-
7
-
8
-
9
ns
Chip Enable to Low-Z Output
t
LZ
3
-
3
-
3
-
ns
Output Enable to Low-Z Output
t
OLZ
0
-
0
-
0
-
ns
UB, LB Enable to Low-Z Output
t
BLZ
0
-
0
-
0
-
ns
Chip Disable to High-Z Output
t
HZ
0
7
0
8
0
9
ns
Output Disable to High-Z Output
t
OHZ
0
7
0
8
0
9
ns
UB, LB Disable to High-Z Output
t
BHZ
0
7
0
8
0
9
ns
Output Hold from Address Change
t
OH
3
-
3
-
3
-
ns
相關(guān)PDF資料
PDF描述
KM6164002B 256K x 16 Bit High-Speed CMOS Static RAM(256Kx16位低功耗CMOS 靜態(tài) RAM)
KM6164002BI 256K x 16 Bit High-Speed CMOS Static RAM(256Kx16位低功耗CMOS 靜態(tài) RAM)
KM6164002 CMOS SRAM
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