參數(shù)資料
型號: KM6164002E
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: CMOS SRAM
中文描述: CMOS SRAM的
文件頁數(shù): 6/9頁
文件大?。?/td> 167K
代理商: KM6164002E
KM6164002, KM6164002E, KM6164002I
CMOS SRAM
PRELIMINARY
Rev 2.0
June -1997
- 4 -
TEST CONDITIONS
NOTE: Above test conditions are also applied at extended and industrial temperature ranges
.
Parameter
Value
Input Pulse Levels
0V to 3V
3
§à
Input Rise and Fall Times
Input and Output timing Reference Levels
1.5V
Output Loads
See below
AC CHARACTERISTICS
(T
A
=0 to 70
°
C, V
CC
=5.0V
±
10%, unless otherwise noted.)
READ CYCLE
NOTE: Above parameters are also guaranteed at extended and industrial temperature ranges.
Parameter
Symbol
KM6164002-20
KM6164002-25
Unit
Min
Max
Min
Max
Read Cycle Time
t
RC
20
-
25
-
§à
§à
§à
§à
Address Access Time
t
AA
-
20
-
25
Chip Select to Output
t
CO
-
20
-
25
Output Enable to Valid Output
t
OE
-
10
-
12
UB, LB Access Time
t
BA
-
10
-
12
ns
§à
§à
Chip Enable to Low-Z Output
t
LZ
5
-
5
-
Output Enable to Low-Z Output
t
OLZ
0
-
0
-
UB, LB Enable to Low-Z Output
t
BLZ
0
-
0
-
ns
§à
§à
Chip Disable to High-Z Output
t
HZ
0
7
0
8
Output Disable to High-Z Output
t
OHZ
0
7
0
8
UB, LB Disable to High-Z Output
t
BHZ
0
7
0
8
ns
§à
Output Hold from Address Change
t
OH
4
-
5
-
Output Loads(A)
Output Loads(B)
for t
HZ,
t
LZ
, t
WHZ
, t
OW
, t
OLZ
& t
OHZ
DOUT
5pF*
480
255
+5.0V
DOUT
30pF*
480
255
+5.0V
* Including Scope and Jig Capacitance
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