- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374356 > KM616S4110C (SAMSUNG SEMICONDUCTOR CO. LTD.) 256Kx16 Bit Low Power and Low Voltage CMOS Static RAM(256K x 16位低功耗低電壓CMOS 靜態(tài)RAM) PDF資料下載
參數(shù)資料
| 型號： | KM616S4110C |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Kx16 Bit Low Power and Low Voltage CMOS Static RAM(256K x 16位低功耗低電壓CMOS 靜態(tài)RAM) |
| 中文描述： | 256Kx16位低功耗和低電壓的CMOS靜態(tài)RAM（256K × 16位低功耗低電壓的CMOS靜態(tài)RAM）的 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 166K |
| 代理商： | KM616S4110C |
KM616S4110C Family
CMOS SRAM
Preliminary
Revision 0.01
August 1998
2
256Kx16 bit Low Power and Low Voltage CMOS Static RAM
GENERAL DESCRIPTION
The KM616S4110C families are fabricated by SAMSUNG
′
s
advanced CMOS process technology. The families support
industrial operating temperature ranges and have chip scale
package for user flexibility of system design. The families also
support low data retention voltage for battery back-up operation
with low data retention current.
FEATURES
Process Technology: TFT
Organization: 256K x16
Power Supply Voltage
KM616S4110C Family: 2.3~2.7V
Low Data Retention Voltage: 2.0V(Min)
Three state output and TTL Compatible
Dual CS and standby control by UB, LB
Package Type: 48-CSP
Name
Function
Name
Function
CS
1
,CS
2
Chip Select Inputs
Vcc
Power
OE
Output Enable Input
Vss
Ground
WE
Write Enable Input
UB
Upper Byte(I/O
9
~
16
)
A
0
~A
17
Address Inputs
LB
Lower Byte(I/O
1
~
8
)
I/O
1
~I/O
16
Data Inputs/Outputs
NC
No Connection
PRODUCT FAMILY
1. The parameter is measured with 30pF test load.
Product Family
Operating Temperature
Vcc Range
Speed(ns)
Power Dissipation
PKG Type
Standby
(I
SB1
, Max)
15
μ
A
Operating
(I
CC2
, Max)
25mA
KM616S4110CLI-L
Industrial(-40~85
°
C)
2.3~2.7V
100
1)
/120
48-CSP
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to change products and specifications without notice.
FUNCTIONAL BLOCK DIAGRAM
Clk gen.
Row
selec
I/O
1
~I/O
8
Data
cont
Data
cont
Data
cont
I/O
9
~I/O
16
Vcc
Vss
Precharge circuit.
Memory array
1024 rows
256
×
16 columns
I/O Circuit
Column select
PIN DESCRIPTION
1
48-ball CSP - Top View (Ball Down)
LB
OE
A0
A1
A2
CS2
I/O9
UB
A3
A4
CS1
I/O1
I/O10
I/O11
A5
A6
I/O2
I/O3
Vss
I/O12
A17
A7
I/O4
Vcc
Vcc
I/O13
N.C
A16
I/O5
Vss
I/O15
I/O14
A14
A15
I/O6
I/O7
I/O16
N.C
A12
A13
WE
I/O8
N.C
A8
A9
A10
A11
N.C
2
3
4
5
6
A
B
C
D
E
F
G
H
WE
OE
UB
CS1
LB
Control Logic
CS2
Row
Addresses
Column Addresses
相關PDF資料 |
PDF描述 |
|---|---|
| KM616U4110C | 256Kx16 Bit Low Power and Low Voltage CMOS Static RAM(256K x 16位低功耗低電壓CMOS 靜態(tài) RAM) |
| KM616V1002A | 64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating)(64K x 16 位高速CMOS 靜態(tài) RAM(3.3V 工作)) |
| KM616V1002AI | 64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating)(64K x 16 位高速CMOS 靜態(tài) RAM(3.3V 工作)) |
| KM616V1002B | 64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating)(64K x 16 位高速CMOS 靜態(tài) RAM(3.3V 工作)) |
| KM616V1002BI | 64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating)(64K x 16 位高速CMOS 靜態(tài) RAM(3.3V 工作)) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| KM616V1000BLTI-7L | 制造商:Samsung Semiconductor 功能描述: |
| KM616V1002AT-12 | 制造商:Samsung Electro-Mechanics 功能描述:Static RAM, 64Kx16, 44 Pin, Plastic, TSOP 制造商:SEC 功能描述:Static RAM, 64Kx16, 44 Pin, Plastic, TSOP |
| KM616V1002AT-15 | 制造商:SEC 功能描述:Static RAM, 64Kx16, 44 Pin, Plastic, TSOP |
| KM616V1002BT-10 | 制造商:SEC 功能描述: |
| KM616V4002BT15 | 制造商:SAMSUNG 功能描述:* |
發(fā)布緊急采購，3分鐘左右您將得到回復。