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參數(shù)資料
| 型號(hào)： | KM616U4110C |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Kx16 Bit Low Power and Low Voltage CMOS Static RAM(256K x 16位低功耗低電壓CMOS 靜態(tài) RAM) |
| 中文描述： | 256Kx16位低功耗和低電壓的CMOS靜態(tài)RAM（256K × 16位低功耗低電壓的CMOS靜態(tài)RAM）的 |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 166K |
| 代理商： | KM616U4110C |
KM616U4110C Family
CMOS SRAM
Preliminary
Revision 0.01
August 1998
3
PRODUCT LIST
Industrial Temperature Products(-40~85
°
C)
Part Name
Function
KM616U4110CLZI-7L
KM616U4110CLZI-8L
KM616U4110CLZI-10L
48-CSP, 70ns, 3.0V, LL
48-CSP, 85ns, 3.0V, LL
48-CSP, 100ns, 3.0V, LL
ABSOLUTE MAXIMUM RATINGS
1)
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be
restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Item
Symbol
Ratings
Unit
Voltage on any pin relative to Vss
V
IN
,V
OUT
-0.5 to V
CC
+0.5
V
Voltage on Vcc supply relative to Vss
V
CC
-0.3 to 4.6
V
Power Dissipation
P
D
1.0
W
Storage temperature
T
STG
-65 to 150
°
C
°
C
Operating Temperature
T
A
-40 to 85
FUNCTIONAL DESCRIPTION
1. X means don
′
t care. (Must be low or high state)
CS
1
CS
2
OE
WE
LB
UB
I/O
1~8
I/O
9~16
Mode
Power
H
X
1)
X
1)
X
1)
X
1)
X
1)
High-Z
High-Z
Deselected
Standby
X
1)
L
X
1)
X
1)
X
1)
X
1)
High-Z
High-Z
Deselected
Standby
X
1)
X
1)
X
1)
X
1)
H
H
High-Z
High-Z
Deselected
Standby
L
H
H
H
L
X
1)
High-Z
High-Z
Output Disabled
Active
L
H
H
H
X
1)
L
High-Z
High-Z
Output Disabled
Active
L
H
L
H
L
H
Dout
High-Z
Lower Byte Read
Active
L
H
L
H
H
L
High-Z
Dout
Upper Byte Read
Active
L
H
L
H
L
L
Dout
Dout
Word Read
Active
L
H
X
1)
L
L
H
Din
High-Z
Lower Byte Write
Active
L
H
X
1)
L
H
L
High-Z
Din
Upper Byte Write
Active
L
H
X
1)
L
L
L
Din
Din
Word Write
Active
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| KM616V1002BT-10 | 制造商:SEC 功能描述: |
| KM616V4002BT15 | 制造商:SAMSUNG 功能描述:* |
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