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參數(shù)資料
| 型號(hào)： | KM616V1002B |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating)(64K x 16 位高速CMOS 靜態(tài) RAM(3.3V 工作)) |
| 中文描述： | 64K的× 16位高速CMOS靜態(tài)RAM（3.3V的工作）（64K的× 16位高速的CMOS靜態(tài)隨機(jī)存儲(chǔ)器（3.3V的工作）） |
| 文件頁(yè)數(shù)： | 4/9頁(yè) |
| 文件大?。?/td> | 158K |
| 代理商： | KM616V1002B |
KM616V1002B/BL, KM616V1002BI/BLI
CMOS SRAM
PRELIMINARY
PPreliminary
Rev 2.1
- 4 -
August 1998
TEST CONDITIONS
NOTE: The above test conditions are also applied at industrial temperature range.
Parameter
Value
Input Pulse Levels
0V to 3V
Input Rise and Fall Times
3ns
Input and Output timing Reference Levels
1.5V
Output Loads
See below
AC CHARACTERISTICS
(T
A
=0 to 70
°
C, V
CC
=3.3
±
0.3V, unless otherwise noted.)
Output Loads(B)
for t
HZ
, t
LZ
, t
WHZ
, t
OW
, t
OLZ
& t
OHZ
D
OUT
5pF*
319
353
+3.3V
* Including Scope and Jig Capacitance
READ CYCLE
NOTE: The above parameters are also guaranteed at industrial temperature range.
Parameter
Sym-
bol
KM616V1002B/BL-8
KM616V1002B/BL-10
KM616V1002B/BL-12
Unit
Min
Max
Min
Max
Min
Max
Read Cycle Time
t
RC
8
-
10
-
12
-
ns
Address Access Time
t
AA
-
8
-
10
-
12
ns
Chip Select to Output
t
CO
-
8
-
10
-
12
ns
Output Enable to Valid Output
t
OE
-
4
-
5
-
6
ns
UB, LB Access Time
t
BA
-
8
-
10
-
12
ns
Chip Enable to Low-Z Output
t
LZ
3
-
3
-
3
-
ns
Output Enable to Low-Z Output
t
OLZ
0
-
0
-
0
-
ns
UB, LB Enable to Low-Z Output
t
BLZ
0
-
0
-
0
-
ns
Chip Disable to High-Z Output
t
HZ
0
4
0
5
0
6
ns
Output Disable to High-Z Output
t
OHZ
0
4
0
5
0
6
ns
UB, LB Disable to High-Z Output
t
BHZ
0
4
0
5
0
6
ns
Output Hold from Address Change
t
OH
3
-
3
-
3
-
ns
Output Loads(A)
D
OUT
R
L
= 50
Z
O
= 50
V
L
= 1.5V
30pF*
* Capacitive Load consists of all components of the
test environment.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM616V1002BI | 64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating)(64K x 16 位高速CMOS 靜態(tài) RAM(3.3V 工作)) |
| KM616V1002C | 64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating)(64K x 16 位高速CMOS 靜態(tài) RAM(3.3V 工作)) |
| KM616V1002CI | 64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating)(64K x 16 位高速CMOS 靜態(tài) RAM(3.3V 工作)) |
| KM616V4002B | 256K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating)(256K x 16 位高速CMOS 靜態(tài) RAM(3.3V 工作)) |
| KM616V4002BI | 256K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating)(256K x 16 位高速CMOS 靜態(tài) RAM(3.3V 工作)) |
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|---|---|
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| KM6-19-20PN-FO | 制造商:Amphenol Corporation 功能描述:KM AUSTRALIAN PRODUCT - Bulk |
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