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參數(shù)資料
| 型號： | KM616V4002B |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating)(256K x 16 位高速CMOS 靜態(tài) RAM(3.3V 工作)) |
| 中文描述： | 256K × 16位高速CMOS靜態(tài)RAM（3.3V的工作）（256K × 16位高速的CMOS靜態(tài)隨機存儲器（3.3V的工作）） |
| 文件頁數(shù)： | 8/9頁 |
| 文件大?。?/td> | 157K |
| 代理商： | KM616V4002B |
KM616V4002B/BL, KM616V4002BI/BLI
CMOS SRAM
PRELIMPreliminaryPPPPPPPPPINARY
Rev 2.1
June 1998
- 8 -
FUNCTIONAL DESCRIPTION
* NOTE : X means Don
′
t Care.
CS
WE
OE
LB
UB
Mode
I/O Pin
Supply Current
I/O
1
~I/O
8
I/O
9
~I/O
16
H
X
X*
X
X
Not Select
High-Z
High-Z
I
SB
, I
SB1
L
H
H
X
X
Output Disable
High-Z
High-Z
I
CC
L
X
X
H
H
L
H
L
L
H
Read
D
OUT
High-Z
I
CC
H
L
High-Z
D
OUT
L
L
D
OUT
D
OUT
L
L
X
L
H
Write
D
IN
High-Z
I
CC
H
L
High-Z
D
IN
L
L
D
IN
D
IN
DATA RETENTION CHARACTERISTICS*
(T
A
=0 to 70
°
C)
NOTE: The above parameters are also guaranteed at industrial temperature range.
* L-Ver only.
Parameter
Symbol
Test Condition
Min.
Typ.
Max.
Unit
V
CC
for Data Retention
V
DR
CS
≥
V
CC
- 0.2V
V
CC
=3.0V, CS
≥
V
CC
- 0.2V
V
IN
≥
V
CC
- 0.2V or V
IN
≤
0.2V
2.0
-
3.6
V
Data Retention Current
I
DR
-
-
1.0
mA
V
CC
=2.0V, CS
≥
V
CC
- 0.2V
V
IN
≥
V
CC
- 0.2V or V
IN
≤
0.2V
-
-
0.7
Data Retention Set-Up Time
t
SDR
See Data Retention
Wave form(below)
0
-
-
ns
Recovery Time
t
RDR
5
-
-
ms
DATA RETENTION WAVE FORM
CS controlled
V
CC
3.0V
V
IH
V
DR
CS
GND
Data Retention Mode
CS
≥
V
CC
- 0.2V
t
SDR
t
RDR
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