- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374363 > KMM372V404BS (SAMSUNG SEMICONDUCTOR CO. LTD.) 4M x 72 DRAM DIMM with ECC using 4Mx16, 4Mx4 4K Refresh, 3.3V PDF資料下載
參數(shù)資料
| 型號： | KMM372V404BS |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 4M x 72 DRAM DIMM with ECC using 4Mx16, 4Mx4 4K Refresh, 3.3V |
| 中文描述： | 4米× 72的DRAM內(nèi)存的ECC的使用4Mx16，4Mx4 4K的刷新，3.3 |
| 文件頁數(shù)： | 6/19頁 |
| 文件大?。?/td> | 417K |
| 代理商： | KMM372V404BS |
DRAM MODULE
KMM372V404BS
NOTES
An initial pause of 200us is required after power-up followed
by any 8 RAS-only or CAS-before-RAS refresh cycles before
proper device operation is achieved.
Input voltage levels are V
ih
/V
il
. V
IH
(min) and V
IL
(max) are ref-
erence levels for measuring timing of input signals. Transi-
tion times are measured between V
IH
(min) and V
IL
(max) and
are assumed to be 5ns for all inputs.
Measured with a load equivalent to 1 TTL loads and 100pF.
Operation within the
t
RCD
(max) limit insures that
t
RAC
(max)
can be met.
t
RCD
(max) is specified as a reference point only.
If
t
RCD
is greater than the specified
t
RCD
(max) limit, then
access time is controlled exclusively by
t
CAC
.
Assumes tha
t
RCD
≥
t
RCD
(max).
This parameter defines the time at which the output achieves
the open circuit condition and is not referenced to V
OH
or
V
OL
.
t
WCS
,
t
RWD
,
t
CWD
,
t
AWD
and
t
CPWD
are not restrictive operat-
ing parameter. They are included in the data sheet as electri-
cal characteristics only. If
t
WCS
≥
t
WCS
(min) the cycle is an
early write cycle and the data out pin will remain high imped-
ance for the duration of the cycle. If
t
RWD
≥
t
RWD
(min),
t
CWD
≥
t
CWD
(min),
t
AWD
≥
t
AWD
(min) and
t
CPWD
≥
t
CPWD
(min).
The cycle is a read-modify-write cycle and the data out will
contain data read from the selected cell. If neither of the
above sets of conditions is satisfied, the condition of data
out(at access time) is indeterminate.
Either
t
RCH
or
t
RRH
must be satisfied for a read cycle.
These parameters are referenced to the CAS leading edge in
early write cycles.
Operation within the
t
RAD
(max) limit insures that
t
RAC
(max)
can be met.
t
RAD
(max) is specified as reference point only. If
t
RAD
is greater than the specified
t
RAD
(max) limit, then
access time is controlled by
t
AA
.
The timing skew from the DRAM to the DIMM resulted from
the addition of buffers.
t
ASC
,
t
CAH
are referenced to the earlier CAS falling edge.
t
CP
is specified from the last CAS rising edge in the previous
cycle to the first CAS falling edge in the next cycle.
t
CWD
is referenced to the later CAS falling edge at word read-
modify-write cycle.
t
CWL
is specified from W falling edge to the earlier CAS rising
edge.
t
CSR
is referenced to earlier CAS falling low before RAS tran-
sition low.
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
15.
16.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KMM372V413CK | 4M x 72 DRAM DIMM with ECC using 2Mx8, Dual Bank 2K Refresh, 3.3V |
| KMM372V413CS | 4M x 72 DRAM DIMM with ECC using 2Mx8, Dual Bank 2K Refresh, 3.3V |
| KMM372V803BS | 8M x 72 DRAM DIMM with ECC using 8Mx8, 4K 8K Refresh, 3.3V |
| KMM372V883BS | 8M x 72 DRAM DIMM with ECC using 8Mx8, 4K 8K Refresh, 3.3V |
| KMM372V804BS | 8Mx72 DRAM DIMM(8Mx72 動態(tài) RAM模塊) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KMM372V410CK | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 72 DRAM DIMM with ECC using 4Mx4, 4K 2K Refresh, 3.3V |
| KMM372V410CS | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 72 DRAM DIMM with ECC using 4Mx4, 4K 2K Refresh, 3.3V |
| KMM372V413CK | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 72 DRAM DIMM with ECC using 2Mx8, Dual Bank 2K Refresh, 3.3V |
| KMM372V413CS | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 72 DRAM DIMM with ECC using 2Mx8, Dual Bank 2K Refresh, 3.3V |
| KMM372V803BK | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 72 DRAM DIMM with ECC using 8Mx8, 4K 8K Refresh, 3.3V |
發(fā)布緊急采購，3分鐘左右您將得到回復。