參數(shù)資料
型號(hào)： KMM374F1600BK3
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 16M x 72 DRAM DIMM(16M x 72 動(dòng)態(tài) RAM模塊)
中文描述： 1,600 × 72的DRAM內(nèi)存（1,600 × 72動(dòng)態(tài)內(nèi)存模塊）
文件頁數(shù)： 4/21頁
文件大?。?/td> 404K
代理商： KMM374F1600BK3
DRAM MODULE
KMM374F160(8)0BK3
I
CC1
, I
CC3
, I
CC4
and I
CC6
are dependent on output loading and cycle rates. Specified values are obtained with the output open.
I
CC
is specified as an average current. In I
CC1
and I
CC3
, address can be changed maximum once while RAS=V
IL
. In I
CC4
,
address can be changed maximum once within one EDO mode cycle time,
t
HPC
.
* NOTE :
ABSOLUTE MAXIMUM RATINGS *
* Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to
the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for in
periods may affect device reliability.
tended
Item
Symbol
V
IN
, V
OUT
V
CC
T
stg
P
D
I
OS
Rating
-0.5 to +4.6
-0.5 to +4.6
-55 to +150
18
50
Unit
V
V
°
C
W
mA
Voltage on any pin relative V
SS
Voltage on V
CC
supply relative to V
SS
Storage Temperature
Power Dissipation
Short Circuit Output Current
RECOMMENDED OPERATING CONDITIONS
(Voltage referenced to V
SS
, T
A
= 0 to 70
°
C)
*1 : V
CC
+1.3V at pulse width
≤
15ns which is measured at V
CC
.
*2 : -1.3V at pulse width
≤
15ns which is measured at V
SS
.
Item
Symbol
Min
3.0
0
2.0
-0.3
*2
Typ
Max
Unit
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
V
CC
V
SS
V
IH
V
IL
3.3
0
-
-
3.6
0
V
CC
+0.3
*1
0.8
V
V
V
V
DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions unless otherwise noted)
I
CC1
I
CC2
I
CC3
I
CC4
I
CC5
I
CC6
I(
IL)
I(
OL)
V
OH
V
OL
Symbol
Speed
KMM374F1680BK3
Min
KMM374F1600BK3
Min
-
-
-
-
-
-
-
-
-
-
-10
-5
2.4
-
Unit
Max
1620
1440
36
1620
1440
1800
1620
9
2160
1980
10
5
-
0.4
Max
2160
1980
36
2160
1980
1980
1800
9
2160
1980
10
5
-
0.4
I
CC1
-5
-6
-
-
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
uA
uA
V
V
I
CC2
I
CC3
Don
′
t care
-5
-6
-5
-6
Don
′
t care
-5
-6
-
-
-
-
-
-
-
-
I
CC4
I
CC5
I
CC6
I
I(L)
I
O(L)
V
OH
V
OL
Don
′
t care
-10
-5
2.4
-
Don
′
t care
: Operating Current * ( RAS, CAS, Address cycling @
t
RC
=min)
: Standby Current ( RAS=CAS=W=V
IH
)
: RAS Only Refresh Current * ( CAS=V
IH
, RAS cycling @
t
RC
=min)
: Extended Data Out Mode Current * ( RAS=V
IL
, CAS cycling :
t
HPC
=min)
: Standby Current ( RAS=CAS=W=V
CC
-0.2V)
: CAS-Before-RAS Refresh Current * ( RAS and CAS cycling @
t
RC
=min)
: Input Leakage Current (Any input 0
≤
V
IN
≤
V
CC
+0.3V, all other pins not under test=0 V)
: Output Leakage Current(Data Out is disabled, 0V
≤
V
OUT
≤
V
CC
)
: Output High Voltage Level (I
OH
= -2mA)
: Output Low Voltage Level (I
OL
= 2mA)
相關(guān)PDF資料
PDF描述
KMM374F1680BK 16Mx72 DRAM DIMM(16M x 72 動(dòng)態(tài) RAM模塊)
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