參數(shù)資料
型號(hào)： KMM374F1600BK3
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 16M x 72 DRAM DIMM(16M x 72 動(dòng)態(tài) RAM模塊)
中文描述： 1,600 × 72的DRAM內(nèi)存（1,600 × 72動(dòng)態(tài)內(nèi)存模塊）
文件頁(yè)數(shù)： 7/21頁(yè)
文件大?。?/td> 404K
代理商： KMM374F1600BK3
DRAM MODULE
KMM374F160(8)0BK3
NOTES
An initial pause of 200us is required after power-up followed
by any 8 RAS-only or CAS-before-RAS refresh cycles before
proper device operation is achieved.
Input voltage levels are V
ih
/V
il
. V
IH
(min) and V
IL
(max) are ref-
erence levels for measuring timing of input signals. Transi-
tion times are measured between V
IH
(min) and V
IL
(max) and
are assumed to be 5ns for all inputs.
Measured with a load equivalent to 1 TTL loads and 100pF.
Operation within the
t
RCD
(max) limit insures that
t
RAC
(max)
can be met.
t
RCD
(max) is specified as a reference point only.
If
t
RCD
is greater than the specified
t
RCD
(max) limit, then
access time is controlled exclusively by
t
CAC
.
Assumes that
t
RCD
≥
t
RCD
(max).
This parameter defines the time at which the output achieves
the open circuit condition and is not referenced to V
OH
or
V
OL
.
t
WCS
,
t
RWD
,
t
CWD
and
t
AWD
are non-restrictive operating
parameter. They are inclueded in the data sheet as electrical
characteristics only. If
t
WCS
≥
t
WCS
(min), the cycle is an early
write cycle and the data out pin will remain high impedance
for the duration of the cycle. If
t
RWD
≥
t
RWD
(min) and
t
AWD
≥
t
AWD
(min), then the cycle is a
read-write cycle and the data output will contain the data
read from the selected address. If neither of the above conti-
tions are satisfied, The condition of the data out is indeterni-
mated.
t
CWD
≥
t
CWD
(min),
Either
t
RCH
or
t
RRH
must be satisfied for a read cycle.
Operation within the
t
RAD
(max) limit insures that
t
RAC
(max)
can be met.
t
RAD
(max) is specified as a reference point only.
If
t
RAD
is greater than the specified
t
RAD
(max) limit, then
access time is controlled exclusively by
t
AA
.
If RAS goes to high before CAS high going, the open circuit
condtion of the output is achieved by CAS high going. If CAS
goes to high before RAS high going, the open circuit cond-
tion of the output is achieved by RAS high going.
t
ASC
≥
6ns.
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
相關(guān)PDF資料
PDF描述
KMM374F1680BK 16Mx72 DRAM DIMM(16M x 72 動(dòng)態(tài) RAM模塊)
KMM374F1600BK 16Mx72 DRAM DIMM(16M x 72 動(dòng)態(tài) RAM模塊)
KMM374F224BJ1 2M x 72 DRAM DIMM(2Mx72 動(dòng)態(tài) RAM模塊)
KMM374F3280BK1 32M x 72 DRAM DIMM(32M x 72 動(dòng)態(tài) RAM模塊)
KMM374F3200BK1 32M x 72 DRAM DIMM(32M x 72 動(dòng)態(tài) RAM模塊)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KMM374S403CT 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:PC100 SDRAM MODULE
KMM38 制造商:TYSEMI 制造商全稱(chēng):TY Semiconductor Co., Ltd 功能描述:SILICON PLANAR ZENER DIODES
KMM39 制造商:TYSEMI 制造商全稱(chēng):TY Semiconductor Co., Ltd 功能描述:SILICON PLANAR ZENER DIODES
KMM391M400MCND 制造商:United Chemi-Con 功能描述:SN400X139 UCC S6L9A
KMM4 制造商:TYSEMI 制造商全稱(chēng):TY Semiconductor Co., Ltd 功能描述:SILICON PLANAR ZENER DIODES
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*