參數(shù)資料
型號： KMM374F3200BK
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 32M x 72 DRAM DIMM(32M x 72 動態(tài) RAM模塊)
中文描述： 32M × 72配置的DRAM內(nèi)存（32M × 72配置動態(tài)內(nèi)存模塊）
文件頁數(shù)： 4/21頁
文件大?。?/td> 435K
代理商： KMM374F3200BK
DRAM MODULE
KMM374F320(8)0BK
I
CC1
, I
CC3
, I
CC4
and I
CC6
are dependent on output loading and cycle rates. Specified values are obtained with the output open.
I
CC
is specified as an average current. In I
CC1
and I
CC3
, address can be changed maximum once while RAS=V
IL
. In I
CC4
,
address can be changed maximum once within one EDO mode cycle time,
t
HPC
.
* NOTE :
ABSOLUTE MAXIMUM RATINGS *
* Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to
the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for in
periods may affect device reliability.
tended
Item
Symbol
V
IN
, V
OUT
V
CC
T
stg
P
d
I
OS
Rating
-0.5 to +4.6
-0.5 to +4.6
-55 to +150
36
50
Unit
V
V
°
C
W
mA
Voltage on any pin relative V
SS
Voltage on V
CC
supply relative to V
SS
Storage Temperature
Power Dissipation
Short Circuit Output Current
RECOMMENDED OPERATING CONDITIONS
(Voltage referenced to V
SS
, T
A
= 0 to 70
°
C)
*1 : V
CC
+1.3V at pulse width
≤
15ns which is measured at V
CC
.
*2 : -1.3V at pulse width
≤
15ns which is measured at V
SS
.
Item
Symbol
Min
3.0
0
2.0
-0.3
*2
Typ
Max
3.6
0
Unit
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
V
CC
V
SS
V
IH
V
IL
3.3
0
-
-
V
CC
+0.3
*1
0.8
V
V
V
V
DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions unless otherwise noted)
I
CC1
I
CC2
I
CC3
I
CC4
I
CC5
I
CC6
I(
IL)
I(
OL)
V
OH
V
OL
Symbol
Speed
KMM374F3280BK
Min
KMM374F3200BK
Min
-
-
-
-
-
-
-
-
-
-
-10
-10
2.4
-
Unit
Max
1656
1476
72
1656
1476
1836
1656
18
2196
2016
10
10
-
0.4
Max
2196
2016
72
2196
2016
2016
1836
18
2196
2016
10
10
-
0.4
I
CC1
-5
-6
-
-
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
uA
uA
V
V
I
CC2
I
CC3
Don
′
t care
-5
-6
-5
-6
Don
′
t care
-5
-6
-
-
-
-
-
-
-
-
I
CC4
I
CC5
I
CC6
I
I(L)
I
O(L)
V
OH
V
OL
Don
′
t care
-10
-10
2.4
-
Don
′
t care
: Operating Current * ( RAS, CAS, Address cycling @
t
RC
=min)
: Standby Current ( RAS=CAS=W=V
IH
)
: RAS Only Refresh Current * ( CAS=V
IH
, RAS cycling @
t
RC
=min)
: Extended Data Out Mode Current * ( RAS=V
IL
, CAS cycling :
t
HPC
=min)
: Standby Current ( RAS=CAS=W=V
CC
-0.2V)
: CAS-Before-RAS Refresh Current * ( RAS and CAS cycling @
t
RC
=min)
: Input Leakage Current (Any input 0
≤
V
IN
≤
V
CC
+0.3V, all other pins not under test=0 V)
: Output Leakage Current(Data Out is disabled, 0V
≤
V
OUT
≤
V
CC
)
: Output High Voltage Level (I
OH
= -2mA)
: Output Low Voltage Level (I
OL
= 2mA)
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