- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374363 > KMM374F3280BK1 (SAMSUNG SEMICONDUCTOR CO. LTD.) 32M x 72 DRAM DIMM(32M x 72 動態(tài) RAM模塊) PDF資料下載
參數(shù)資料
| 型號： | KMM374F3280BK1 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 32M x 72 DRAM DIMM(32M x 72 動態(tài) RAM模塊) |
| 中文描述： | 32M × 72配置的DRAM內(nèi)存（32M × 72配置動態(tài)內(nèi)存模塊） |
| 文件頁數(shù)： | 5/21頁 |
| 文件大?。?/td> | 478K |
| 代理商： | KMM374F3280BK1 |
DRAM MODULE
KMM374F320(8)0BK1
CAPACITANCE
(T
A
= 25
°
C, V
CC
=3.3V, f = 1MHz)
Item
Symbol
C
IN1
C
IN2
C
IN3
C
IN4
CDQ
Min
Max
190
136
73
52
27
Unit
pF
pF
pF
pF
pF
Input capacitance[A0-A12]
Input capacitance[ W0, W2, OE0, OE2]
Input capacitance[ RAS0 - RAS3]
Input capacitance[ CAS0 - CAS7]
Input/Output capacitance[DQ0-DQ63, CB0-CB7]
-
-
-
-
-
AC CHARACTERISTICS
(0
°
C
≤
T
A
≤
70
°
C, V
CC
=3.3V
±
0.3V. See notes 1,2.)
Test condition : V
ih
/V
il
=2.2/0.7V, V
oh
/V
ol
=2.0/0.8V, output loading C
L
=100pF
Parameter
Symbol
-5
-6
Unit
Note
Min
90
128
Max
Min
110
153
Max
Random read or write cycle time
Read-modify-write cycle time
Access time from RAS
Access time from CAS
Access time from column address
CAS to output in Low-Z
OE to output in Low-Z
Output buffer turn-off delay from CAS
Transition time(rise and fall)
RAS precharge time
RAS pulse width
RAS hold time
CAS hold time
CAS pulse width
RAS to CAS delay time
RAS to column address delay time
CAS to RAS precharge time
Row address set-up time
Row address hold time
Column address set-up time
Column address hold time
Column address to RAS lead time
Read command set-up time
Read command hold referenced to CAS
Read command hold referenced to RAS
Write command hold time
Write command pulse width
Write command to RAS lead time
Write command to CAS lead time
Data set-up time
Data hold time
Refresh period (4K & 8K Ref.)
Write command set-up time
CAS to W dealy time
RAS to W dealy time
t
RC
t
RWC
t
RAC
t
CAC
t
AA
t
CLZ
t
OLZ
t
CEZ
t
T
t
RP
t
RAS
t
RSH
t
CSH
t
CAS
t
RCD
t
RAD
t
CRP
t
ASR
t
RAH
t
ASC
t
CAH
t
RAL
t
RCS
t
RCH
t
RRH
t
WCH
t
WP
t
RWL
t
CWL
t
DS
t
DH
t
REF
t
WCS
t
CWD
t
RWD
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ns
ns
ns
50
13
25
60
15
30
3,4,9
3,4,5
3,9
3
3
6,10
2
3
3
3
1
3
3
3
1
13
50
13
50
30
50
8
38
8
17
12
5
0
7
0
7
25
0
0
0
7
7
8
7
0
7
40
60
10
40
10
20
15
5
0
10
0
10
30
0
0
0
10
10
10
10
0
10
10K
10K
10K
37
25
10K
45
30
4
9
8
8
64
64
0
0
7
7
7
33
70
38
84
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KMM374F3200BK1 | 32M x 72 DRAM DIMM(32M x 72 動態(tài) RAM模塊) |
| KMM374F3280BK | 32M x 72 DRAM DIMM(32M x 72 動態(tài) RAM模塊) |
| KMM374F3200BK | 32M x 72 DRAM DIMM(32M x 72 動態(tài) RAM模塊) |
| KMM374F404BS | 4M x 72 DRAM DIMM(4Mx72 動態(tài) RAM模塊) |
| KMM374F410CK1 | 4M x 72 DRAM DIMM(4Mx72 動態(tài) RAM模塊) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KMM374S403CT | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:PC100 SDRAM MODULE |
| KMM38 | 制造商:TYSEMI 制造商全稱:TY Semiconductor Co., Ltd 功能描述:SILICON PLANAR ZENER DIODES |
| KMM39 | 制造商:TYSEMI 制造商全稱:TY Semiconductor Co., Ltd 功能描述:SILICON PLANAR ZENER DIODES |
| KMM391M400MCND | 制造商:United Chemi-Con 功能描述:SN400X139 UCC S6L9A |
| KMM4 | 制造商:TYSEMI 制造商全稱:TY Semiconductor Co., Ltd 功能描述:SILICON PLANAR ZENER DIODES |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。