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參數(shù)資料
| 型號： | L6741 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | High current MOSFET driver |
| 中文描述： | 高電流MOSFET驅(qū)動器 |
| 文件頁數(shù)： | 10/16頁 |
| 文件大?。?/td> | 265K |
| 代理商： | L6741 |
Device description and operation
L6741
10/16
This last term is the important one to be determined to calculate the device power
dissipation.
The total power dissipated to switch the mosfets results:
P
SW
F
SW
Q
GHS
PVCC
Q
GLS
VCC
+
(
)
=
When designing an application based on L6741 it is recommended to take into
consideration the effect of external gate resistors on the power dissipated by the driver.
External gate resistors helps the device to dissipate the switching power since the same
power P
SW
will be shared between the internal driver impedance and the external resistor
resulting in a general cooling of the device.
Referring to
Figure 6
, classical mosfet driver can be represented by a push-pull output stage
with two different mosfets: P-MOSFET to drive the external gate high and N-MOSFET to
drive the external gate low (with their own R
dsON
: R
hi_HS,
R
lo_HS
, R
hi_LS,
R
lo_LS
). The
external power mosfet can be represented in this case as a capacitance (C
G_HS
, C
G_LS
)
that stores the gate-charge (Q
G_HS
, Q
G_LS
) required by the external power MOSFET to
reach the driving voltage (PVCC for HS and VCC for LS). This capacitance is charged and
discharged at the driver switching frequency F
SW
.
The total power Psw is dissipated among the resistive components distributed along the
driving path. According to the external Gate resistance and the power-MOSFET intrinsic
gate resistance, the driver dissipates only a portion of Psw as follow:
The total power dissipated from the driver can then be determined as follow:
Figure 6.
Equivalent circuit for MOSFET drive.
P
SW
HS
–
1
2
--
C
GHS
PVCC
2
Fsw
R
R
GateHS
R
hiHS
R
iHS
+
+
---------------------------------------------------------------
R
R
GateHS
R
loHS
R
iHS
+
+
---------------------------------------------------------------
+
=
P
SW
LS
–
1
2
--
C
GLS
VCC
2
Fsw
R
R
GateLS
R
hiLS
R
iLS
+
+
-------------------------------------------------------------
R
R
GateLS
R
loLS
R
iLS
+
+
-------------------------------------------------------------
+
=
P
P
DC
P
SW
HS
–
P
SW
LS
–
+
+
=
R
GATELS
R
ILS
C
GLS
VCC
LS DRIVER
LS MOSFET
GND
LGATE
R
GATEHS
R
IHS
C
GHS
BOOT
HS DRIVER
HS MOSFET
PHASE
HGATE
PVCC
R
h
R
l
R
h
R
l
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| L6741TR | 功能描述:功率驅(qū)動器IC SnglPphase Dual MOSFET Driver RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| L6743 | 功能描述:功率驅(qū)動器IC SnglPphase Dual MOSFET Driver RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| L6743_08 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:High current MOSFET driver |
| L6743B | 功能描述:功率驅(qū)動器IC Hi-current MOSFET Driver RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| L6743BTR | 功能描述:功率驅(qū)動器IC HIGH CURRENT MOSFET DRIVER DC-DC RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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