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參數(shù)資料
| 型號： | L6743 |
| 廠商： | 意法半導體 |
| 英文描述： | High current MOSFET driver |
| 中文描述： | 高電流MOSFET驅(qū)動器 |
| 文件頁數(shù)： | 11/17頁 |
| 文件大?。?/td> | 282K |
| 代理商： | L6743 |
L6743, L6743Q
Device description and operation
11/17
5.5
Layout guidelines
L6743, L6743Q provides driving capability to implement high-current step-down DC-DC
converters.
The first priority when placing components for these applications has to be reserved to the
power section, minimizing the length of each connection and loop as much as possible. To
minimize noise and voltage spikes (also EMI and losses) power connections must be a part
of a power plane and anyway realized by wide and thick copper traces: loop must be anyway
minimized. The critical components, such as the power MOSFETs, must be close one to the
other. However, some space between the power MOSFET is still required to assure good
thermal cooling and airflow.
Traces between the driver and the MOSFETS should be short and wide to minimize the
inductance of the trace so minimizing ringing in the driving signals. Moreover, VIAs count
needs to be minimized to reduce the related parasitic effect.
The use of multi-layer printed circuit board is recommended.
Small signal components and connections to critical nodes of the application as well as
bypass capacitors for the device supply are also important. Locate the bypass capacitor
(VCC, PVCC and BOOT capacitors) close to the device with the shortest possible loop and
use wide copper traces to minimize parasitic inductance.
Systems that do not use Schottky diodes in parallel to the Low-Side MOSFET might show
big negative spikes on the phase pin. This spike can be limited as well as the positive spike
but has an additional consequence: it causes the bootstrap capacitor to be over-charged.
This extra-charge can cause, in the worst case condition of maximum input voltage and
during particular transients, that boot-to-phase voltage overcomes the abs.max.ratings also
causing device failures. It is then suggested in this cases to limit this extra-charge by adding
a small resistor R
BOOT
in series to the boot capacitor. The use of R
BOOT
also contributes in
the limitation of the spike present on the BOOT pin.
For heat dissipation, place copper area under the IC. This copper area may be connected
with internal copper layers through several VIAs to improve the thermal conductivity. The
combination of copper pad, copper plane and VIAs under the driver allows the device to
reach its best thermal performances.
Figure 7.
Driver turn-on and turn-off paths
R
GATE
R
INT
C
GD
C
GS
C
DS
VCC
LS DRIVER
LS MOSFET
GND
LGATE
R
GATE
R
INT
C
GD
C
GS
C
DS
BOOT
HS DRIVER
HS MOSFET
PHASE
HGATE
VCC
R
BOOT
C
BOOT
R
BOOT
C
BOOT
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相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| L6743_08 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:High current MOSFET driver |
| L6743B | 功能描述:功率驅(qū)動器IC Hi-current MOSFET Driver RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| L6743BTR | 功能描述:功率驅(qū)動器IC HIGH CURRENT MOSFET DRIVER DC-DC RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| L6743D | 功能描述:功率驅(qū)動器IC Hi-current MOSFET Driver RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| L6743DTR | 功能描述:功率驅(qū)動器IC Hi-Current MOSFET Driver RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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